Abstract:Core-shell structured SiC/SiO2 nanowires (SiC/SiO2 NWs) were synthesized by a simple thermal evaporation method without a catalyst. The influence of the growth temperature and holding time on the microstructure and composition of the nanowires were investigated. The results indicate that within the temperature range of 1150 to 1550 degrees C, the color of SiC/SiO2 nanowires gradually transitions from pure white to off-white with increasing temperature. During this process, the average diameter of SiC/SiO2 increases from 74 nm to 291 nm, while the surface SiO2 layer thickness decreases from 17 nm to 5 nm, with nanowires can reach lengths of hundreds of micrometres. Variations in supersaturation of SiO and CO at different temperatures lead to discrepancies in nanowire diameter and SiO2 shell thickness. At 1350 degrees C, prolonged holding time enhances silicon powder reaction, resulting in increased structural disorder of the obtained SiC/SiO2 nanowires. The nanowire growth follows a vapor-solid (V-S) mechanism. Additionally, the study demonstrates that the photoluminescence (PL) characteristics of the nanowires exhibit a blue shift attributable to their nanoscale dimensions, while variations in emission spectra correlate with stacking faults, SiC diameter, and SiO2 thickness. This work may be provide a theoretical basis for preparing SiC/SiO2 nanowires with different diameters and SiO2 shell thicknesses, which is crucial for advancing the development and application of SiC/SiO2 nanoceramics.

Study of Silicon Dioxide Nanowires Grown Via Rapid Thermal Annealing of Sputtered Amorphous Carbon Films Doped with Si

Ultrafast growth of single-crystalline Si nanowires

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Growth of Crystalline Silicon Nanowires on Nickel-Coated Silicon Wafer Beneath Sputtered Amorphous Carbon

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Amorphous Siox Nanowires Grown on Silicon(100) Substrates Via Rapid Thermal Process of Nanodiamond Films

Analysis of Silicon Dioxde Nanowires Synthesized Via Rapid Thermal Annealing of Pt-coated Si Substrates

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Growth of Amorphous SiO2 Nano-Wires on Pre-Oxidized Silicon Substrate Via Chemical Vapor Deposition

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

SiO2 Nano-Crystals Embedded in Amorphous Silica Nanowires

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.

A Simple Method to Synthesize Α-Si3n4, Β-Sic and SiO2 Nanowires by Carbothermal Route

In-situ Synthesis of SiC/SiO2 Nanowires by Catalyst-Free Thermal Evaporation of Silicon Powder and Their Photoluminescence Properties

Growth of SiO2 Nanowires Co-Catalyzed by Carbon and Nickel Particles

A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture

Carbon-assisted Growth and High Visible-Light Optical Reflectivity of Amorphous Silicon Oxynitride Nanowires

Amorphous SiO2 Nanoparticles Grown on the Surface of the Nanowires

Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing

Direct Synthesis of Α-Silicon Nitride Nanowires from Silicon Monoxide on Alumina