A Simple Method to Synthesize Α-Si3n4, Β-Sic and SiO2 Nanowires by Carbothermal Route

Qiushi Wang,Ridong Cong,Min Li,Jian Zhang,Qiliang Cui
DOI: https://doi.org/10.1016/j.jcrysgro.2010.03.039
IF: 1.8
2010-01-01
Journal of Crystal Growth
Abstract:α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are about 50–200nm in stem diameter and 10–100μm in length. α-Si3N4 nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [001] and [111] directions, respectively, wrapped within an amorphous SiOx layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires.
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