Direct Synthesis of Α-Silicon Nitride Nanowires from Silicon Monoxide on Alumina

Jiang Cui,Bin Li,Chunrong Zou,Changrui Zhang,Siqing Wang
DOI: https://doi.org/10.5772/61661
2015-01-01
Nanomaterials and Nanotechnology
Abstract:Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and thermogravimetric-differential scanning calorimetry. The results revealed that silicon nitride nanowires possess a diameter of about 200 nm and a length of several hundred micrometres. The preferred growth direction of the nanowires was [100]. The chemical and structural composition of the silicon nitride nanowires were also studied and were shown to have a composition of primarily α-Si3N4. The temperature for fierce oxidation in air was above 1135°C. The formation mechanism of silicon nitride nanowires was assumed to be a vapour-solid (VS) process.
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