Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing

Yi-Sheng Lai,Jyh-Liang Wang,Sz-Chian Liou,Chia-Hsun Tu

DOI: https://doi.org/10.1016/j.cplett.2008.01.026

IF: 2.719

2008-01-01

Chemical Physics Letters

Abstract:Results of a vapor transport growth of SiOx nanowires, directly obtained from Pt catalysts on SiO2 by rapid thermal annealing, are demonstrated and discussed.

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Rapid-Heating-Triggered in Situ Solid-State Transformation of Amorphous TiO2 Nanotubes into Well-Defined Anatase Nanocrystals

Zhonghui Gao,Ying Zhao,Haifeng Wang,Yun Wang,Lixue Jiang,Yiming Xu,Baixiang Xu,Lirong Zheng,Chuanhong Jin,Porun Liu,Huagui Yang,Huijun Zhao,Xianjin Yang,Yunhui Huang

DOI: https://doi.org/10.1021/acs.cgd.8b01604

IF: 4.01

2019-01-01

Crystal Growth & Design

Abstract:Fabrication of nanocrystals from their disordered solid-state precursors represents a new synthetic strategy. Compared to the widely used chemical vapor deposition and wet-chemistry based methods employing gas and liquid phased precursors, the solid-state transformation of disordered solid precursors to highly ordered crystals is a great challenge due to the severely restricted mass transport and inadequate structural directing mechanism. Herein, we report a rapid-heating-triggered in situ solid-state crystal growth method capable of transforming amorphous TiO2 nanotubes into anatase nanocrystals with well-defined facets and uniform sizes within a minute. The results obtained from in situ transmission electron microscopy and three-dimensional phase-field simulation indicate that the basic building blocks are formed through mechanical rupture of an amorphous TiO2 nanotube precursor, followed by an enhanced diffusion and concomitant oriented attachment onto TiO2 crystal nuclei mediated by the fluorine species evolved from the rapid heating. The unique crystal growth demonstrated in this work provides an alternative synthetic means for fabrication of other nanocrystals from solid-state precursors.
Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Xingbo Liang,Lei Wang,Xiaoqiang Li,Deren Yang

DOI: https://doi.org/10.1016/j.tsf.2007.01.044

IF: 2.1

2007-01-01

Thin Solid Films

Abstract:Rapid thermal annealing (RTA) has been performed on the carbon films prepared by radio frequency plasma-enhanced chemical vapor deposition on Si substrate. The RTA at 800 degrees C for 60 s leads to the formation of many diamond nanocrystallites agglomerating on the film surface. Higher temperature RTA at I 100 degrees C for 60 s induces the high-density amorphous SiOx (x= 1.2) nanowires on the film surface without diamond nanocrystallites. At both the RTA temperatures, a well-oriented SiC interlayer is also formed simultaneously. The sp 3 sites in the carbon film and the oxygen during the RTA treatment as well as the RTA temperature are considered to play important roles in determining the final reaction products. (C) 2007 Elsevier B.V. All rights reserved.
Amorphous Siox Nanowires Grown on Silicon(100) Substrates Via Rapid Thermal Process of Nanodiamond Films

XB Liang,L Wang,DR Yang

DOI: https://doi.org/10.1016/j.tsf.2005.09.168

IF: 2.1

2006-01-01

Thin Solid Films

Abstract:Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 °C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 °C RTP treatments. Large-scale amorphous SiOx nanowires with diameters of 30–50 nm and length up to 10 μm were synthesized after RTP treatment at 1200 °C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.
Growth and Photoluminescence of Si-SiOx Nanowires by Catalyst-Free Chemical Vapor Deposition Technique

Yue Yu,Ruiying Luo,Haidong Shang

DOI: https://doi.org/10.1016/j.apsusc.2016.01.251

IF: 6.7

2016-01-01

Applied Surface Science

Abstract:We developed a one-step catalyst-free chemical vapor deposition process to synthesize Si-SiOx nanowires using tetraethoxysilane as the precursor. Observations using scanning electron microscopy showed that the Si-SiOx nanowires were 20-50 nm in diameter and tens of microns in length. The high-resolution transmission electron microscope analysis and X-ray diffraction demonstrated that the nanowires consisted of crystal silicon and amorphous SiOx. The Si and 0 with an atomic ratio of the Si-SiOx NWs were 1:1.2 according to the energy dispersion X-ray spectroscope. A systematic study on the effect of the growth conditions, such as reaction temperature, the reaction time, and the TEOS vapor flow rate was performed. The formation of Si-SiOx nanowires was implemented by the non-classical crystallization mechanism. The charged nanoparticles acting as building blocks self-assembled into nanowires. The photoluminescence measurements were carried out and showed that the Si-SiOx nanowires emitted stable ultraviolet and green luminescence excited by ultraviolet light. (C) 2016 Elsevier B.V. All rights reserved.
Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Junjie Niu,Jian Sha,Qing Yang,Deren Yang

DOI: https://doi.org/10.1143/jjap.43.4460

2004-01-01

Abstract:Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs,with nearly amorphous structure were fabricated at 500degreesC; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800degreesC. The average diameter and length of the SiNWs are 40-70 nm and 10 mum, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

JJ Niu,J Sha,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.05.002

IF: 3.369

2004-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Silicon nanowires (SiNWs) with a diameter of ∼20nm were synthesized by the thermal evaporation of sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. It is considered that the generated SiS compound assisted the formation of SiNWs. Finally, the Raman shift of SiNWs was discussed.
Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

JJ Niu,H Sha,YW Wang,XY Ma,DR Yang

DOI: https://doi.org/10.1016/s0167-9317(03)00026-1

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:The crystallization and the disappearance of the defects and impurity stress of silicon nanowires (SiNWs) after annealing at high temperature (900°C) have been investigated. The chemical-vapor-deposition (CVD) and alumina template technology were used for the synthesis of the SiNWs. Then transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL) spectra were used to study the crystallization procedure and the disappearance of defects of the SiNWs.
Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Junjie Niu,Jian Sha,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2004.01.013

2004-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:A large-scale crystalline silicon nanowires (SiNWs) with a diameter of ∼30nm and length of tens of micrometers on Al2O3 templates and silicon wafers were synthesized by the thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy, respectively. It was pointed out that the SiNWs possessed the well crystalline structure. Therefore, it is considered that SiO could be used as Si sources to produce larger-scale SiNWs and crystalline SiNWs may grow from amorphous nuclei.
Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

Hui Li,Leilei Guan,Zhuoqi Xu,Yu Zhao,Jian Sun,Jiada Wu,Ning Xu

DOI: https://doi.org/10.1016/j.apsusc.2016.07.100

IF: 6.7

2016-01-01

Applied Surface Science

Abstract:Amorphous SiO2 nanowires are successfully fabricated on fused silica substrates covered by nickel/carbon catalyst bilayers via a method of pulsed laser deposition accompanied by annealing in ambient N-2. The field emission scanning electron microscopy images show that the optimum annealing temperature for the growth of SiO2 nanowires is about 1200 degrees C and the grown SiO2 nanowires become denser, longer and more uniform with the increment of annealing duration. The results of transmission electron microscopy and high-resolution transmission electron microscopy show that the grown nanowires are amorphous and have dark spheres on their tops. The analyses of energy dispersive X-ray spectroscopy reveal that the nanowires are composed of SiO2 and the dark spheres on their tops contain little nickel. It is inferred that nickel, carbon and CO are the key elements to promote the SiO2 nanowire growth in the solid-liquid solid mode. Transmission spectra demonstrate that the as-grown nanowire thin films can have about 94% average transmittance in the range of 350-800 nm, meanwhile the photoluminescence spectra of the as-grown SiO2 nanowire samples show stable ultraviolet emission centered at about 363 nm with a shoulder at about 393 nm. (C) 2016 Elsevier B.V. All rights reserved.
Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.

Zhishan Yuan,Chengyong Wang,Ke Chen,Zhonghua Ni,Yunfei Chen

DOI: https://doi.org/10.1186/s11671-017-2251-1

2017-01-01

Nanoscale Research Letters

Abstract:In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.
Tiny SiO2 nano-wires synthesized on Si (111) wafer

Junjie Niu,Jian Sha,Niansheng Zhang,Yujie Ji,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2003.11.274

2004-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Tiny SiO2 nano-wires (SiO2-NWs) were synthesized on a p-Si (111) wafer by the chemical-vapor-deposition method. The minimum diameter of the nano-wires was around 9nm, and the length was longer than 10μm. The results of transmission electron microscopy shows that the amorphous nano-wires were composed of Si and O with an approximate atomic ratio of 1:2. Furthermore, the photoluminescence behavior of the SiO2-NWs has been also checked.
Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

JJ Niu,J Sha,ZH Liu,ZX Su,J Yu,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.04.040

2004-01-01

Abstract:Thin silicon nano-wires (SiNWs) with a diameter of ∼10–20nm were fabricated by a simple thermal evaporation of silicon wafer at 1523K. The gold produced by an electrochemical method was covered on the wafer surface as catalyst. It was found that the SiNWs are amorphous and its Raman peak shifted down maybe due to the effect of laser heating and quantum confinement. Finally, a temperature gradient growth model is suggested to explain the growth direction of SiNWs.
Study on Thermal Oxidation of Si Nanowires

JL Liu,Y Lu,Y Shi,SL Gu,RL Jiang,F Wang,HM Bu,YD Zheng

DOI: https://doi.org/10.1002/(sici)1521-396x(199808)168:2<441::aid-pssa441>3.0.co;2-v

1998-01-01

Abstract:In this paper we reported the results on the low-temperature thermal oxidation of Si nanowires. Various polygon-shaped Si nanowires with linewidths between 100 and 300 nm were fabricated on Si/Si1-xGex/Si heterostructure substrates by using lithography, reactive ion etching, and subsequent selective chemical etching. We find that oxidized Si nanowires following 750 and 775 degrees C wet oxidation will keep the same shape as the initial unoxidized samples, and all the SiO2 boundaries of oxidized samples will arrive at a circular shape. These results, which should be due to stress effects, provide useful information for understanding the behavior of non-planar oxidation that is used in modern Si nanoelectronic technology.
Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

Xibao Yang,Hang Lv,Shuanglong Chen,Qiushi Wang,Linhai Jiang

DOI: https://doi.org/10.1007/s12633-023-02538-9

IF: 3.4

2023-06-11

Silicon

Abstract:Ultrafine Si embedded SiO 2 nanowires have been prepared by thermal evaporation using Pt catalyst. The ultrafine Si embedded SiO 2 nanowires with a diameter of about 10 nm were grown in-situ on the Si substrate, conforming to a vapor-liquid-solid growth mechanism. On account of the existence of the quantum confinement effect, the absorption edge of the ultrafine Si embedded SiO 2 nanowires is slightly larger. The photoluminescence result reveals a blue shift in the ultrafine nanowires, which may also be due to the quantum confinement effect caused by the small size. The Pt-related light emission characteristics will enable the development of nanowires in the field of optoelectronics.

materials science, multidisciplinary,chemistry, physical
Evolution of Si Suboxides into Si Nanocrystals During Rapid Thermal Annealing As Revealed by Xps and Raman Studies

Wali Zhang,Sam Zhang,Yang Liu,Tupei Chen

DOI: https://doi.org/10.1016/j.jcrysgro.2008.12.038

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:Si nanocrystals (nc-Si) were synthesized by rapid thermal annealing of magnetron-sputtered amorphous SiOx films. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were employed to study the evolution of chemical structures and the rapid growth of nc-Si. XPS results reveal five chemical structures of Si in the as-deposited films corresponding to silicon oxidation states: Sin+ (n=0, 1, 2, 3 and 4). Their bonding structures are found to be inhomogeneous, and far from that predicted by the random-bonding model. XPS and Raman spectra suggest that the formation of amorphous Si nanoclusters had already taken place in the as-deposited samples. Formation of nc-Si was realized through a combination of thermal decomposition and the diffusion process. Upon thermal annealing, Si suboxides (Si2O, SiO and Si2O3) decompose into Si and SiO2, resulting in the rapid growth of nc-Si.
In situ catalytic growth of Al2O3 and Si nanowires

C.C. Tang,S.S. Fan,P. Li,M.Lamy de la Chapelle,H.Y. Dang

DOI: https://doi.org/10.1016/S0022-0248(01)00852-1

IF: 1.8

2001-01-01

Journal of Crystal Growth

Abstract:Al2O3 nanowires and Si nanowires with wrapping layers of amorphous Al2O3 have been synthesized by heating a mixture of Al, SiO2 and Fe2O3 catalyst supported on alumina at different temperatures. The results indicate the growth of the two nanowires competes against each other and depends on the reaction temperature. The addition of SiO2 is not essential for synthesizing Al2O3 nanowires. Al2O3 nanowires can be synthesized by directly heating Al with some catalysts when oxygen was introduced. In situ catalytic growth and silica-assisted effect are also discussed.
A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture

Yingjiu Zhang,Nanlin Wang,Rongrui He,Jun Liu,Xiaozhong Zhang,Jing Zhu

DOI: https://doi.org/10.1016/S0022-0248(01)01650-5

IF: 1.8

2001-01-01

Journal of Crystal Growth

Abstract:Si3N4 nanowires and SiO2 amorphous nanowires with diameters of 10–70 and 10–300nm, respectively, have been synthesized by heating Si powders or Si/SiO2 mixtures with or without metal catalyst at 1200°C at ambient pressure. It is found that the reactant gases (N2, Ar and NH3) affect the yields and morphologies of the products, and the metal catalysts are not necessary in growth of the Si3N4 and SiO2 nanowires. High resolution electron microscopy (HREM) and electron energy loss spectrum (EELS) reveal that the Si3N4 nanowire is a single crystal covered by an amorphous SiO2 layer. The growth mechanism is assumed to be a vapor–solid (VS) process.
Synthesis and Growth Mechanism of Various SiO2 Nanostructures from Straight to Helical Morphologies

Wei Tian,Siyan Liu,Longjiang Deng,Nasir Mahmood,Xian Jian

DOI: https://doi.org/10.1016/j.compositesb.2018.05.025

2018-01-01

Abstract:Taking into account the high demands and applications of amorphous SiO2 in various nanostructured forms, here we have synthesized various nanostructures of SiO2 including nanosprings, straight nanofibers, nanotubes and nanobelts. A simple catalytic chemical vapor deposition (CCVD) technique is developed where Si, SiO2 and graphene capsules are utilized as starting materials. The structural and chemical analysis of the as-prepared nanostructures confirms the amorphous nature of SiO2 and shows the minor existence of SiC, which acts as a growth directing agent for various shapes of SiO2. The electron microscopic observations delineate the morphologies of the as-prepared nanostructures with different shapes i.e. nano-fibers, tubes, springs and belts. It is observed that straight SiO2 fibers having diameter of similar to 440 nm are thicker than the fibers (similar to 220 nm) constructing the nanosprings while the overall helical diameter falls in the range of 530-690 nm. The in-depth structural and morphological studies reveal that the growth mechanism of SiO2 nanostructures is in the vapor liquid-solid (VLS) growth mode. The unique microstructures with special morphologies straight, helical and hollow shapes make them potential candidate for several functional applications such as nanoelectron-magnetic devices, mechanical sensor system and flexible energy storage devices.
Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Renbing Wu,Baosheng Li,Mingxia Gao,Jianjun Chen,Qimiao Zhu,Yi Pan

DOI: https://doi.org/10.1088/0957-4484/19/33/335602

IF: 3.5

2008-01-01

Nanotechnology

Abstract:Single crystalline SiC nanowires were synthesized by a catalyst free vapor deposition method using elemental silicon and graphite carbon as the starting materials. The phase, morphology, crystal structure, and defects of the products were characterized by x-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Within a 6 h reaction time, the morphology of the SiC nanowires can be tuned to cylinder, hexagonal prism, or bamboo shape by simply altering the reaction temperature from 1470 degrees C, 1550 degrees C to 1630 degrees C, respectively. The photoluminescence of these differently shaped SiC nanowires was measured and is discussed. Based on the characterization results, the vapor-solid growth mechanisms for the multi-shaped SiC nanowires are proposed by taking into account the possible reactions between intermediate gas phases, the reaction steps, and the surface energy minimization.

Tailoring of amorphous SiOx nanowires grown by rapid thermal annealing

Ultrafast growth of single-crystalline Si nanowires

Rapid-Heating-Triggered in Situ Solid-State Transformation of Amorphous TiO2 Nanotubes into Well-Defined Anatase Nanocrystals

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Amorphous Siox Nanowires Grown on Silicon(100) Substrates Via Rapid Thermal Process of Nanodiamond Films

Growth and Photoluminescence of Si-SiOx Nanowires by Catalyst-Free Chemical Vapor Deposition Technique

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Study on Thermal Oxidation of Si Nanowires

Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

Evolution of Si Suboxides into Si Nanocrystals During Rapid Thermal Annealing As Revealed by Xps and Raman Studies

In situ catalytic growth of Al2O3 and Si nanowires

A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture

Synthesis and Growth Mechanism of Various SiO2 Nanostructures from Straight to Helical Morphologies

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.