Abstract:In this work, silicon-rich oxide (SRO) films with designed thickness of similar to 100 nm were deposited by a bipolar pulse and radio frequency magnetron co-sputtering. For comparison, the samples were then treated in a nitrogen atmosphere by conventional rapid thermal annealing (CRTA) or light-filtering rapid thermal annealing (LRTA) at 900-1100 degrees C for 2 min. Raman spectra, grazing incident X-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurements, and current density-voltage measurements were carried out to analyze the microstructural and electrical properties of samples. Compared with the control sample using CRTA method, the crystalline volume fraction and number density of Si nanocrystals (Si NCs) in silicon oxide prepared by LRTA were greatly increased. The quantum effects of the short wave-length light (less than 800 nm) of these tungsten halogen lamps during the rapid thermal annealing process have negative effects on the formation of Si NCs in SiO2 films. Si NCs with crystal volume fraction of 73%, average size of 2.53 nm, and number density of similar to 1.1 x 10(12) cm(-2) embedded in the amorphous SiO2 matrix can be formed by LRTA at 1100 degrees C. Enhancement of more than one order of magnitude in conductivity and higher current density were obtained from the LRTA annealed sample compared to the CRTA annealed sample. The improvements in conductivity and current density were attributed to the high density Si NCs. Our results show that the LRTA method is a suitable annealing tool for the formation of Si NC in thin SiOx films.

Evolution of Si Suboxides into Si Nanocrystals During Rapid Thermal Annealing As Revealed by Xps and Raman Studies

Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

ENHANCED FORMATION OF Si NANOCRYSTALS IN SiO2 BY LIGHT-FILTERING RAPID THERMAL ANNEALING

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Microstructure Evolution of Si Nanocrystals in Si/C Multilayer Films

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Study on Phase Separation in A-Siox for Si Nanocrystal Formation Through the Correlation of Photoluminescence with Structural and Optical Properties

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Characterization of Sn and Si nanocrystals embedded in SiO2 matrix fabricated by magnetron co-sputtering

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Twinning Ge0.54Si0.46 Nanocrystal Growth Mechanism in Amorphous SiO2 Films

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

Crystallization Behavior of Laser Synthesized Nanometric Amorphous Si3n4 Powders

Structural Evolution And Photoluminescence Of Annealed Si-Rich Nitride With Si Quantum Dots Prepared By Plasma Enhanced Chemical Vapor Deposition

Crystallization Kinetics of Selenium Nanocrystalline Film on Silicon (100) Substrate Produced by Rapid Thermal-annealing