Abstract:In this work, silicon-rich oxide (SRO) films with designed thickness of similar to 100 nm were deposited by a bipolar pulse and radio frequency magnetron co-sputtering. For comparison, the samples were then treated in a nitrogen atmosphere by conventional rapid thermal annealing (CRTA) or light-filtering rapid thermal annealing (LRTA) at 900-1100 degrees C for 2 min. Raman spectra, grazing incident X-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurements, and current density-voltage measurements were carried out to analyze the microstructural and electrical properties of samples. Compared with the control sample using CRTA method, the crystalline volume fraction and number density of Si nanocrystals (Si NCs) in silicon oxide prepared by LRTA were greatly increased. The quantum effects of the short wave-length light (less than 800 nm) of these tungsten halogen lamps during the rapid thermal annealing process have negative effects on the formation of Si NCs in SiO2 films. Si NCs with crystal volume fraction of 73%, average size of 2.53 nm, and number density of similar to 1.1 x 10(12) cm(-2) embedded in the amorphous SiO2 matrix can be formed by LRTA at 1100 degrees C. Enhancement of more than one order of magnitude in conductivity and higher current density were obtained from the LRTA annealed sample compared to the CRTA annealed sample. The improvements in conductivity and current density were attributed to the high density Si NCs. Our results show that the LRTA method is a suitable annealing tool for the formation of Si NC in thin SiOx films.

Analysis of Silicon Dioxde Nanowires Synthesized Via Rapid Thermal Annealing of Pt-coated Si Substrates

Ultrafast growth of single-crystalline Si nanowires

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Amorphous Siox Nanowires Grown on Silicon(100) Substrates Via Rapid Thermal Process of Nanodiamond Films

Rapid-Heating-Triggered in Situ Solid-State Transformation of Amorphous TiO2 Nanotubes into Well-Defined Anatase Nanocrystals

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Synthesis and Raman Spectra of Si-Nanowires

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

ENHANCED FORMATION OF Si NANOCRYSTALS IN SiO2 BY LIGHT-FILTERING RAPID THERMAL ANNEALING

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Direct Synthesis of Α-Silicon Nitride Nanowires from Silicon Monoxide on Alumina

Tiny silicon nano-wires synthesis on silicon wafers

Rapid thermal annealing of Si paste film and pn-junction formation

Water-Assisted Synthesis Of Silicon Oxide Nanowires Under Supercritically Hydrothermal Conditions