Abstract:Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 °C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 μm of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission electron microscopy analysis showed that the crystallized film under the Ni coverage was composed of randomly oriented fine grains, while that outside the Ni coverage was mainly composed of large (110)-oriented grains. A unified mechanism is proposed to explain the Ni induced crystallization of a-Si and possible reasons for the reduction in the lateral crystallization rate are discussed.

Growth of Crystalline Silicon Nanowires on Nickel-Coated Silicon Wafer Beneath Sputtered Amorphous Carbon

Ultrafast growth of single-crystalline Si nanowires

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Study of Silicon Dioxide Nanowires Grown Via Rapid Thermal Annealing of Sputtered Amorphous Carbon Films Doped with Si

Growth of Amorphous SiO2 Nano-Wires on Pre-Oxidized Silicon Substrate Via Chemical Vapor Deposition

Growth of Nickel Films on the Surface of Silicon Nanowire

Growth of SiO2 Nanowires Co-Catalyzed by Carbon and Nickel Particles

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Growth Model of Lantern-Like Amorphous Silicon Oxide Nanowires

Amorphous Siox Nanowires Grown on Silicon(100) Substrates Via Rapid Thermal Process of Nanodiamond Films

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.

Morphology of Silicon/Silicon-Oxide Nanowires Grown from Nickel-Coated Silicon Wafers

Carbon-assisted Growth and High Visible-Light Optical Reflectivity of Amorphous Silicon Oxynitride Nanowires

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Wire Or No Wire-Depends On The Catalyst Layer Thickness

Non-catalytic vapor synthesis of millimeter-scale α-Si 3 N 4 nanowires from oxidized silicon powders

Orientation of Silicon Nanowires Grown from Nickel-Coated Silicon Wafers