Abstract:Cubic silicon carbide (3C–SiC) is an excellent protective film on graphite and has been fabricated via laser chemical vapor deposition (LCVD) with an extremely high deposition rate by our research group. To understand comprehensively its growth behavior, the polycrystalline 3C–SiC thick films with the preferred orientation of <111> and <110> were characterized by diverse measurements, especially electron back-scatter diffraction (EBSD). Along the growth direction of the <110>-oriented 3C–SiC, the microstructure changed from equiaxed grains to elongated grains with <111> orientation, and eventually the <110>-oriented columnar grains. The stacking faults in the <110>-oriented 3C–SiC could be marked as <11–20>-oriented 6H–SiC. On the other hand, in the <111>-oriented 3C–SiC films, the microstructure changed from mainly equiaxed grains to large columnar grains. The high-density stacking faults in <111>-oriented 3C–SiC films may lead to the identification of the nominal 2H, 4H and 6H polytypes by Raman spectra and EBSD. The (0001) planes of 2H-, 4H–SiC are perpendicular to the growth direction, while that of 6H–SiC are parallel.

GIAXD and XPS study of 3C-SiC film prepared by EB-PVD

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Preparation and Analysis of Si3N4 Film

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

Investigation of PECVD SiC nano film

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Influence of Growth Conditions on the Incorporation of Substitutional C in Si1-x-yGexCy Alloy on Si by Chemical Vapor Deposition Using C2H4

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition