Abstract:CuO nanowires are known to have excellent electrochemical properties and can be produced by various methods. Among them a method which directly heat either the Si wafer with Cu layer or pure copper plate so called the thermal oxidation method has lately been drawing attention. However, during its production, interfacial delamination between the Cu layer and the wafer has always been an issue. In this study, the mechanism of interfacial delamination was experimentally elucidated by comparing a Si wafer with Cu layer deposited by electron beam evaporation with a pure copper plate. As a result, it was found that the deposited Cu layer decreased with increasing heating time of the Si wafer production. Moreover, the disappearance of the Cu layer and Cu2O layer on the Si wafer was found in the specimens with a heating time of 6 hours. It was suggested that this disappearance would form an opening between the CuO layer and the Si wafer leading to the delaminating of the interface between the oxide film and the wafer. The disappearance also suggested that the length and density of the CuO nanowires in the specimens with a heating time of 6 hours were minimized. As for the pure copper plate, the disappearance of the Cu layer and Cu2O layer was not seen regardless of the heating time, therefore there was no interfacial delamination and it was able to produce CuO nanowires at a high density.

Effects of Substrates on Silicon Oxide Nanowires Growth by Thermal Chemical Vapor Deposition

Ultrafast growth of single-crystalline Si nanowires

Crystalline boron oxide nanowires on silicon substrate

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

One-dimensional Silicon Nanostructures Fabricated by Thermal Evaporation

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Growth of CuO Nanowires on Si Substrate by Thermal Oxidation Method and Its Interfacial Delamination Mechanism.

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Silicon nano-wires grown at low temperature

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Growth of semiconductor nanowires on iron-patterned silicon substrates

Investigation of the Growth Process of Si Nanowires Using the Vapour-Liquid-solid Mechanism

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst

Synthesis of Silicon Oxide Nanowires by Chemical Vapor Deposition

Influence of substrates on the formation of the TiSi nanowire by atmosphere pressure chemical vapor deposition.

Growth of Silicon Nanowires by Heating Si Substrate

Study on Thermal Oxidation of Si Nanowires