Abstract:Titanium silicide (TiSi2) thin films were prepared on glass substrate by atmospheric pressure chemical vapor deposition using SiH4 and TiCl4 as the precursors. The phase structure of the thin films was identified by x-ray diffractometry. The surface morphology and thickness of the thin films were observed by field emission scannig electron microscopy and the sheet resistance of the thin films was measured using the four point probe method. The results show that the TiSi2 thin films are formed in a face-centered orthorhombic structure. Due to the influence of the amorphous glass substrate, an amorphous layer is initially formed on the substrate and the TiSi2 crystalline phase grows on top of it. As the thickness and content of TiSi2 crystalline phase increase with deposition time, the resistivity of the thin film decreases. Besides, the growth rate and thus the size of TiSi2 crystalline phase increase as the deposition temperature increases. The stack density decreases when the deposition temperature increases above 700°C because the rapid growth at the higher temperatures causes more irregular shape of crystalline particles. The maximal stack density of the crystalline phase and thus the minimum resistivity of the thin films are obtained at the deposition temperature of 700°C. The expressions of the stack density of crystalline phase and the resistivity of the thin films as functions of the deposition conditions are theoretically deduced which are well consistent with the experimental results.

Influence of substrates on the formation of the TiSi nanowire by atmosphere pressure chemical vapor deposition.

Preparation of titanium silicide nanowires by APCVD method

Ultrafast growth of single-crystalline Si nanowires

Atmospheric Pressure Chemical Vapor Deposition of TiSi2 Films on Glass

Nucleation and Growth of Tisi2 Thin Films Deposited on Glass by Atmospheric Pressure Chemical Vapor Deposition

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Self-Assembly of Tisi Nanowires on Tisi2 Thin Films by Apcvd

Electrical and optical properties of titanium nitride coatings prepared by atmospheric pressure chemical vapor deposition

A facile solution route to deposit TiO2 nanowire arrays on arbitrary substrates.

EFFECT OF CRYSTALLINE PHASE FORMATION ON OPTICAL PROPERTIES OF TiSi2 THIN FILMS

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Growth of carbon nanotubes on SiO2-particle substrates via CVD method

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Preparation and Properties of Titanium Silicide Coating Glass by CVD

A gas-solid reaction growth of dense TiO 2 nanowire arrays on Ti foils at ambient atmosphere

Synthesis and Microstructure of Epitaxial SiC Nanowires

Preparation of TiSi Nanowires by APCVD Used for Improving Dielectric Properties of PST Thin Film

Effects of Ambient Pressure on Silicon Nanowire Growth

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

The fabrication of Te nanowires with different orientations by vacuum vapor deposition