Abstract:The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. The effect of a Mo interposed layer between Ti films and Si substrate was investigated by varying the thickness of the Mo interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). The thickness of Ti was kept to 55 nm for all samples. Both isothermal annealing and ramp annealing in helium were performed in order to study the mechanism of silicide formation. While C49 TiSi2 was the only disilicide found after annealing Ti/Si at 650 °C for 20 min, C54 TiSi2 was readily formed in the presence of Mo. The formation of C49 TiSi2 was not observed with a 1.8 nm thick Mo interlayer. Instead, there was indication that C40 (Mo,Ti)Si2 was formed. In addition, broad diffraction peaks, weak in intensity, could be all assigned to Ti5Si4. However, the presence of Ti5Si4 alone did not induce the formation of C54 TiSi2. Even with a 20 °C increase in isothermal annealing temperature to 670 °C for 20 min, the presence of Mo was found to be a necessity for the formation of C54 TiSi2. When annealed in nitrogen, instead of helium, the formation of surface titanium nitride competes with the formation of silicides. The formation of C54 TiSi2 was even suppressed in the sample with a 1.8 nm Mo interlayer when annealed at 650 °C in nitrogen. The formation of Ti5Si4 and the role it plays in the formation of other silicides (C40, C49, and C54) are discussed on the basis of simple crystallographic considerations. The effect of a Mo interlayer and/or ramp-rate on the formation of C40 (Mo,Ti)Si2 and C49 TiSi2 is discussed in conjunction with variations of the preferential orientation of C54 TiSi2 films.

Preparation and Properties of Titanium Silicide Coating Glass by CVD

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EFFECT OF CRYSTALLINE PHASE FORMATION ON OPTICAL PROPERTIES OF TiSi2 THIN FILMS

Atmospheric Pressure Chemical Vapor Deposition of TiSi2 Films on Glass

Preparation of titanium silicide nanowires by APCVD method

Study of Titanium Nitride for Low-E Coating Application

Fabrication of Titanium Dioxide Thin Films by DBD-CVD under Atmosphere

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

Effect of Titania Dopant on Optical Performance of Silica Glass

Surface-Morphology Study of Titanium Silicide Formed on Polycrystalline Silicon

Preparation of TiO2/SiO2 Composite by Chemical Coating Method

Electrical and optical properties of titanium nitride coatings prepared by atmospheric pressure chemical vapor deposition

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Ti-Glass Biocomposite Coating Materials and Their Crystallization Dynamics

Structure and hydrophilicity of titanium dioxide film prepared by atmospheric pressure chemical vapor deposition

Crystallization of aluminosilicate glass with additive TiO2

Preparation and Characterization of Silica-Coated CaCu3Ti4O12

Electrical and Corrosion Properties of the Ti5Si3 Thin Films Coated on Glass Substrate by APCVD Method

Investigations of TiC and SiC films synthesized by DC magnetron sputtering and thermal annealing

Low Temperature Coating of Anatase Thin Films on Silica Glass Fibers by Liquid Phase Deposition

Preparation and microstructure properties of Al-doped TiO2–SiO2 gel-glass film