Abstract:Titanium silicide (TiSi2) thin films were prepared on glass substrate by atmospheric pressure chemical vapor deposition using SiH4 and TiCl4 as the precursors. The phase structure of the thin films was identified by x-ray diffractometry. The surface morphology and thickness of the thin films were observed by field emission scannig electron microscopy and the sheet resistance of the thin films was measured using the four point probe method. The results show that the TiSi2 thin films are formed in a face-centered orthorhombic structure. Due to the influence of the amorphous glass substrate, an amorphous layer is initially formed on the substrate and the TiSi2 crystalline phase grows on top of it. As the thickness and content of TiSi2 crystalline phase increase with deposition time, the resistivity of the thin film decreases. Besides, the growth rate and thus the size of TiSi2 crystalline phase increase as the deposition temperature increases. The stack density decreases when the deposition temperature increases above 700°C because the rapid growth at the higher temperatures causes more irregular shape of crystalline particles. The maximal stack density of the crystalline phase and thus the minimum resistivity of the thin films are obtained at the deposition temperature of 700°C. The expressions of the stack density of crystalline phase and the resistivity of the thin films as functions of the deposition conditions are theoretically deduced which are well consistent with the experimental results.

Preparation of titanium silicide nanowires by APCVD method

Self-Assembly of Tisi Nanowires on Tisi2 Thin Films by Apcvd

Influence of substrates on the formation of the TiSi nanowire by atmosphere pressure chemical vapor deposition.

Ultrafast growth of single-crystalline Si nanowires

Preparation and Properties of Titanium Silicide Coating Glass by CVD

Self-induced preparation of TiSi nanopins by chemical vapor deposition

Preparation of TiSi Nanowires by APCVD Used for Improving Dielectric Properties of PST Thin Film

Atmospheric Pressure Chemical Vapor Deposition of TiSi2 Films on Glass

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Nucleation and Growth of Tisi2 Thin Films Deposited on Glass by Atmospheric Pressure Chemical Vapor Deposition

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Investigation of structure and properties of N-doped TiO2 thin films grown by APCVD

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

A facile solution route to deposit TiO2 nanowire arrays on arbitrary substrates.

Enhanced Growth of Crystalline-Amorphous Core-Shell Silicon Nanowires by Catalytic Thermal CVD Using in Situ Generated Tin Catalyst

Synthesis of titanium carbide nanowires

Synthesis and formation mechanism of twinned SiC nanowires made by a catalyst-free thermal chemical vapour deposition method

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

The Structure and Optical Properties of Silicon Nanowires Prepared by Inductively Coupled Plasma Chemical Vapor Deposition

Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method