Self-Induced Preparation of Assembled Shrubbery Tisi Nanowires by Chemical Vapor Deposition
Jun Du,Zhaodi Ren,Kaiying Tao,Anhong Hu,Peng Hao,Yanfei Huang,Gaoling Zhao,Wenjian Weng,Gaorong Han,Piyi Du
DOI: https://doi.org/10.1021/cg7008545
IF: 4.01
2008-01-01
Crystal Growth & Design
Abstract:We report a new self-induced catalyst-free method for the preparation of shrubbery TiSi nanowires by atmospheric pressure chemical vapor deposition. SiH4 and TiCl4 are used as a silicon precursor and titanium precursor, respectively. Ti5Si3 thin films are formed initially, and then one-dimensional TiSi nanostructures are grown on top of the thin films. A novel, assembled structure with electrically conductive shrubbery TiSi nanowires with an electrically conductive Ti5Si3 thin layer underneath is finally obtained. The TiSi nanowires grow along the direction perpendicular to the (110) plane of the orthorhombic TiSi crystal. The nanowires are more than 5 mu m long, and their diameters are about 15-40 nm. With the flux of (SiH4 + TiCl4) reaching values larger than 35 seem or increasing from 20 to 35 seem, the quantities of TiSi nuclei are increased and, thus, the TiSi nanowire bundles and rocket-shaped nanowires are also successfully prepared, respectively. With regard to producing a high storage capacitor with the nanowire bottom electrode embedded within the dielectric thin film of Ba0.6Sr0.4TiO3 (BST), the capacitance of the BST/assembled-nanowire-electrode complex structure is about 28 pF, which is approximately 3 times higher than that of BST deposited on indium-tin oxide (ITO). This creates a new way to fabricate the thin film devices with a high storage capacitance.