Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications
Yue Peng,Wenwu Xiao,Fenning Liu,Yan Liu,Genquan Han,Nan Yang,Ni Zhong,Chungang Duan,Chen Liu,Yichun Zhou,Ze Feng,Hong Dong,Yue Hao
DOI: https://doi.org/10.1109/ted.2020.3007563
IF: 3.1
2020-09-01
IEEE Transactions on Electron Devices
Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al<sub>2</sub>O<sub>3</sub> gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO<sub>2</sub> films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al<sub>2</sub>O<sub>3</sub>/TaN, TaN/Al<sub>2</sub>O<sub>3</sub>/Si, and TaN/Al<sub>2</sub>O<sub>3</sub>/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al<sub>2</sub>O<sub>3</sub>/Ge capacitor achieves over 10<sup>10</sup> cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al<sub>2</sub>O<sub>3</sub> insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.
engineering, electrical & electronic,physics, applied