Abstract:Atomic layer deposition (ALD) of Y2O3 thin films was studied using a novel homoleptic yttrium ALD precursor: tris(sec-butylcyclopentadienyl)yttrium [Y(sBuCp)3]. Y(sBuCp)3 is a liquid at room temperature. The thermogravimetry curve for Y(sBuCp)3 is clean, with no indication of decomposition or residue formation. Thermogravimetry-differential thermal analysis measurements showed that Y(sBuCp)3 is stable for 18 weeks at 190 °C. Y(sBuCp)3 has a homoleptic structure. Thus, a reduction in manufacturing costs is expected compared to those associated with heteroleptic precursors because additional chemical synthesis steps are usually necessary to produce heteroleptic compounds. In addition, ALD of Y2O3 was demonstrated using Y(sBuCp)3 and water as a co-reactant. The deposition temperature was varied from 200 to 350 °C. The growth rate was 1.7 Å per cycle. In addition, neither carbon nor nitrogen contamination was detected in the Y2O3 films by X-ray photoelectron spectroscopy. Furthermore, smooth films were confirmed by X-ray secondary-electron microscopy. The root-mean-square roughness was measured to be 0.660 nm by atomic force microscopy. Metal-insulator-semiconductor (MIS) Pt/Y2O3/p-Si devices were fabricated to evaluate the electrical properties of the Y2O3 films. An electric breakdown field of -6.5 MV cm-1 and a leakage current density of ∼3.2 × 10-3 A cm-2 at 1 MV cm-1 were determined. The permittivity of Y2O3 was estimated to be 11.5 at 100 kHz. Therefore, compared with conventional solid precursors, Y(sBuCp)3 is suitable for use in ALD manufacturing processes.

layer deposition of yttrium oxide using tris ( N , N 0-diisopropyl-2-dimethylamido-guanidinato ) yttrium ( III ) : process development , fi lm characterization and functional properties †

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

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Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Synthesis of LaCrO3 films using spray pyrolysis technique

Water Assisted Atomic Layer Deposition of Yttrium Oxide Using Tris(n,n′-Diisopropyl-2-dimethylamido-guanidinato) Yttrium(iii): Process Development, Film Characterization and Functional Properties

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From zirconia to yttria: Sampling the YSZ phase diagram using sputter-deposited thin films

Atomic layer deposition of Y2O3 films using a novel liquid homoleptic yttrium precursor tris(sec-butylcyclopentadienyl)yttrium [Y(sBuCp)3] and water

Preparation of epitaxial yttria-stabilized zirconia with non-quilibrium t' phase and ferroelastic domain by pulsed laser deposition

Effect of Interlayer on Flatness and Adhesion of Aerosol-Deposited Yttrium Oxide Coating

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Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Oxygen Transport in Oxide Thin Film Structures Oriented La[sub 0.5]sr[sub 0.5]coo[sub 3−x] on Single-Crystal Yttria-Stabilized Zirconia

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

Formation of yttrium oxalate phase filled by carbon clusters on the surface of yttrium oxide films

Thulium and ytterbium-doped titanium oxide thin films deposited by ultrasonic spray pyrolysis

Crystallization dynamics of amorphous yttrium iron garnet thin films