Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD
Yinzhu Jiang,Haizheng Song,Jianfeng Gao,Yao‐Wen Chang
DOI: https://doi.org/10.1149/1.1921674
IF: 3.9
2005-01-01
Journal of The Electrochemical Society
Abstract:Yttria-stabilized zirconia (YSZ) thin films on polycrystalline substrates were grown by cold-wall aerosol-assisted metallorganic chemical vapor deposition (MOCVD) at the temperatures of using metal β-diketonate chelates as precursors. Thin uniform films with amorphous structure were obtained below ; when the deposition temperature increases to , YSZ films appear to be a mixture of cubic and monoclinic phases; single cubic YSZ phase can be obtained at deposition temperature above . The atom ratio estimated from the corresponding X-ray photoelectron spectroscopy peaks is less than the feed ratio, which can be interpreted by different transfer resistance of Y and Zr intermediates diffusing to the substrate surface. The films obtained at possess a layer structure originated from low mobility of the absorbed species. Along with the increase of the deposition temperature, the grains become mature and larger, and then unite with each other to form a continuous columnar film. Mass transport dominates the growth process within lower temperatures, and homogeneous reaction will interrupt the growth at increasingly high temperatures. Growth rate expression with respect to temperature, pressure, gas flow rate, and metal concentration of precursor solutions was deduced assuming deposition of mass-transport limited mechanism, which is consistent with the experimental results.