Abstract:Capacitor structures utilized in modern dynamic random access memory (DRAM) cells require the conformal growth of high-k films on electrode materials. In this context, the atomic layer deposition (ALD) of rutile-phase TiO2 on nearly lattice-matched substrates such as RuO2 has been extensively explored. It is typically desired to grow such insulating films at high temperatures to ensure low defect concentrations and high crystallinity. However, with increasing growth temperature, it is also crucial to consider the aggravated effect of interface reactions that could potentially hinder final device performance. Here, we report the high-temperature ALD growth of TiO2 on RuO2 substrates using the heteroleptic precursor trimethoxy(pentamethylcyclopentadienyl)titanium ((CpMe5)Ti(OMe)3) and O3. High-quality, rutile-phase TiO2 films with large dielectric constants of ∼100 could be grown at temperatures exceeding 300 °C. When the growth temperature reaches 330 °C, we find that an anomalous RuO2 reduction reaction occurs due to interactions between the substrate and Ti precursor. The reduced Ru is transformed into volatile RuO4 during the subsequent O3 injection steps, resulting in partial etching of the substrate. Simple RuO2/TiO2/RuO2 capacitor devices fabricated from optimized films demonstrate excellent dielectric performance with an equivalent oxide thickness (EOT) of 0.5 nm at leakage current densities of less than 10–7 A/cm2. A further reduction of EOT to 0.4 nm could be achieved by implementing a single cycle of Al doping to the TiO2 films, surpassing the benchmark values proposed for next-generation DRAM capacitors by a safe margin. Our findings clearly showcase the benefits of high-temperature ALD in the semiconductor technology, as well as providing guidelines for the interpretation of the convoluted interface reactions tied to its implementation.

Water Assisted Atomic Layer Deposition of Yttrium Oxide Using Tris(n,n′-Diisopropyl-2-dimethylamido-guanidinato) Yttrium(iii): Process Development, Film Characterization and Functional Properties

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Atomic layer deposition of Y2O3 films using a novel liquid homoleptic yttrium precursor tris(sec-butylcyclopentadienyl)yttrium [Y(sBuCp)3] and water

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

layer deposition of yttrium oxide using tris ( N , N 0-diisopropyl-2-dimethylamido-guanidinato ) yttrium ( III ) : process development , fi lm characterization and functional properties †

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Aerosol-assisted MOCVD Deposition of YDC Thin Films on (nio + YDC) Substrates

Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide

Deposition and Characterization of YSZ Thin Films by Aerosol-Assisted CVD

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

N ew Class of Zr Precursor Containing Boratabenzene Ligand Enabling Highly Conformal Wafer-Scale Zirconium Dioxide Thin Films through Atomic Layer Deposition

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water

Atomic layer deposition of amorphous tin-gallium oxide films

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

High-Temperature Atomic Layer Deposition of Rutile TiO 2 Films on RuO 2 Substrates: Interfacial Reactions and Dielectric Performance

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors