Abstract:Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal 2D semiconductors of monolayer transition metal dichacolgenides (TMDCs) $M$S$_2$ ($M$ = Mo, W) using first-principle density functional theory simulations. We show that LaO$X$ monolayers interacts weakly with $M$S$_2$ via van der Waals forces with negligible hybridization and interfacial charge transfer, thus conveniently preserving the electronic properties of 2D TMDCs upon contact formation. The conduction and valance band offsets of the interfaces exhibit a sizable value ranging from 0.7 to 1.4 eV, suggesting the capability of LaO$X$ as a gate dielectric materials. Based on Murphy-Good electron emission model, we demonstrate that LaOCl/MoS$_2$ is a versatile dielectric/semiconductor combinations that are compatible to both NMOS and PMOS applications with leakage current lower than $10^{-7}$ Acm$^{-2}$, while LaO$X$/WS$_2$ is generally compatible with PMOS application. The presence of an interfacial tunneling potential barrier at the van der Waals gap further provide an additional mechanism to suppress the leakage current. Our findings reveal the role LaO$X$ as an excellent dielectric companion to 2D TMDC and shall provide useful insights for leveraging the dielectric strength of LaO$X$ in the design of high-performance 2D nanodevices.

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

Lanthanum doped hafnium oxide thin films deposited on a lateral high aspect ratio structure using atomic layer deposition: A comparative study of surface composition and uniformity using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

Substrate and Thickness Effects on Structure and Transport Properties of La2/3ca1/3mno3 Films

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Enhanced Dielectric and Ferroelectric Properties of Pb1−3x/2Lax(Zr0.5Ti0.5)O3 Thin Films with Low Lanthanum Substitution

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics

Structure and conducting properties of La1-xSrxCoO3-δ films

Effects of Lanthanum Doping on the Preferred Orientation, Phase Structure and Electrical Properties of Sol–gel Derived Pb1–3x/2Lax (zr0.6ti0.4)o3 Thin Films

Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to Two-Dimensional Semiconductors

Substrate effects on the ordering nanostructure for La2/3Ca1/3MnO3 ultrathin films

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Layered Defective Lanthanum Titanate Thin Films Prepared by Pulsed Laser Ablation of Potassium Lanthanum Titanate Ceramics

Leakage Current and Dielectric Breakdown in Lanthanum Doped Amorphous Aluminum Oxide Films Prepared by Sol–gel

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Effects of Lanthanum Doping on the Microstructure and Electrical Properties of Sol–gel Derived Pb1-3x/2Lax(Zr0.5Ti0.5)O3 Thin Films

Li-ion conducting Li0.35La0.55TiO3 electrolyte thick films fabricated by aerosol deposition

Structural and electrical properties of SrFe x Ti 1−x O 3 ( x =0.001, 0.005 and 0.01) thin films prepared by pulsed laser depositions