Bendable Bi(Fe0.95Mn0.05)O3 Ferroelectric Film Directly on Aluminum Substrate

Jin Qian,Yingzi Wang,Ranran Liu,Xiangfu Xie,Xu Yan,Jinfeng Leng,Changhong Yang

DOI: https://doi.org/10.1016/j.jallcom.2020.154381

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:With the rapid development of intelligent electronic system, portable, wearable, and smart electronics with excellent electrical performances and mechanical deformations are needed. This work presents a simple one-step way to construct a bendable Bi(Fe0.95Mn0.05)O-3 (BFOMn) film capacitor by the assistant of aluminum metal substrate, which can be used as the substrate and bottom electrode simultaneously. The BFOMn film shows a polycrystalline structure and dense surface morphology. The BFOMn ferroelectric element shows a large remanent polarization (P-r similar to 68 mu C/cm(2)) and saturated polarization (P-s similar to 80 mu C/cm(2)) due to the low leakage current (similar to 2 x 10(-5) A/cm(2) at 150 kV/cm). A high dielectric constant of 196 and a small loss tangent of 0.05 are obtained at a frequency of 100 kHz. The film also displays outstanding thermal stability over a wide temperature range from 25 to 150 degrees C. More significantly, even the capacitor is bent to a minor radius of 2 mm, there is no obvious deterioration in polarization, and the film possesses excellent fatigue resistance (10(9) cycles). These findings are respected to promote the advancement of bendable BiFeO3-based ferroelectric memories for information storage and data processing, which will exhibit an anticipating future in next-generation smart flexible electronics. (C) 2020 Elsevier B.V. All rights reserved.