Abstract:An outstanding potential of ferroelectric Hf0.5Zr0.5O2 ultra‐thin films to create a flexible non‐volatile memory is elucidated. CMOS‐compatible, highly flexible and resistant to tensile load ferroelectric Hf0.5Zr0.5O2‐based memory devices encapsulated in a biocompatible polyimide package exhibit excellent memory window and an excellent mechanical performance. Experimentally measured ferroelectric and dielectric properties under tension are explained by theoretical calculations. Next‐generation flexible electronics for healthcare applications require biocompatible flexible non‐volatile memory for data storage. Ultra‐thin ferroelectric hafnium oxide films offer great potential for flexible memories due to their potential flexibility and perfect compatibility with modern technologies. This study presents ultra‐flexible and stretchable memory devices based on 10‐nm‐thick Hf0.5Zr0.5O2 film fabricated by an innovative technology involving encapsulation of the devices in a biocompatible organic package. They exhibit high memory functionality (remanent polarization of 27 μC cm−2) and withstand extreme mechanical conditions, including folding in half, multiple bending up to 150 000 bending cycles as well as tension with loads up to 1.5 kg. Further, flexible devices are employed as a platform to elucidate the fundamental role of mechanical stress in ferroelectricity of hafnia both experimentally and theoretically. Direct in situ experiment demonstrates that in‐plane tension causes changes in spontaneous polarization, coercive voltage, permittivity, and conductivity. First‐principle calculations explain the role of mechanical stress in ferroelectric and dielectric properties of hafnia. In applications, this work establishes a foundation for the implementation of biocompatible, high‐performance flexible ferroelectric memory, and in the field of ferroelectric materials fundamentals, it provides insight into the critical role of the residual mechanical stress that is inevitably present in thin films.

Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory

Enhanced performance of flexible BiFeO3 ferroelectric memory with Mica substrate via SrTiO3 buffer layer

Flexible, Fatigue-Free, and Large-Scale Bi3.25La0.75Ti3O12 Ferroelectric Memories

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

A Flexible Hf0.5Zr0.5O2 Thin Film with Highly Robust Ferroelectricity

All-inorganic transparent Hf0.85Ce0.15O2 ferroelectric thin films with high flexibility and stability

Flexible Multi‐state Nonvolatile Antiferroelectric Memory

Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications

A BaTiO3-based Flexible Ferroelectric Capacitor for Non-Volatile Memories

Bendable Bi(Fe0.95Mn0.05)O3 Ferroelectric Film Directly on Aluminum Substrate

Effect of stress on ferroelectric properties in flexible BiFe0.97Cr0.03O3/BiFe1−xMnxO3 composite thin films

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories

Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform

Ferroelectric thin films and electrodes for random access memories

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Flexible Lead-Free BaTiO3 Ferroelectric Elements with High Performance

Super‐Flexible Freestanding BiMnO3 Membranes with Stable Ferroelectricity and Ferromagnetism

Excellent Hzo Ferroelectric Thin Films on Flexible Pet Substrate

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

Ferroelectric and Ferromagnetic Properties in Flexible (Gd, Mn) Co-doping BiFeO3 Thin Film