BiFeO3-Based Flexible Ferroelectric Memristors for Neuromorphic Pattern Recognition

Haoyang Sun,Zhen Luo,Letian Zhao,Chuanchuan Liu,Chao Ma,Yue Lin,Guanyin Gao,Zhiwei Chen,Zhiwei Bao,Xi Jin,Yuewei Yin,Xiaoguang Li

DOI: https://doi.org/10.1021/acsaelm.0c00094

IF: 4.494

2020-01-01

ACS Applied Electronic Materials

Abstract:Flexible ferroelectric devices have been a hot-spot topic because of their potential wearable applications as nonvolatile memories and sensors. Here, high-quality (111)-oriented BiFeO(3 )ferroelectric films are grown on flexible mica substrates through an appropriate design of SrRuO3/BaTiO3 double buffer layers. BiFeO3 exhibits the largest polarization (saturated polarization Pr approximate to 100 mu C/cm(2), remnant polarization P-r approximate to 97 mu C/cm(2)) among all the reported flexible ferroelectric films, and ferroelectric polarization is very stable in 10(4 )bending cycles under 5 mm radius. Accordingly, the ferroelectric memristor behaviors are demonstrated with continuously tunable resistances, and thus, the functionality of spike-timing-dependent plasticity is achieved, indicating the capability of flexible BiFeO(3-)based memristors as solid synaptic devices. Moreover, in artificial neural network simulations based on the experimental characteristics of the memristor, a high recognition accuracy of similar to 90% on handwritten digits is obtained through online supervised learning. These results highlight the potential wearable applications of flexible ferroelectric memristors for data storage and computing.