A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems

Lei Zhou,Yifei Pei,Changliang Li,Hui He,Chao Liu,Yue Hou,Haoyuan Tian,Jianxin Guo,Baoting Liu,Xiaobing Yan
DOI: https://doi.org/10.1063/5.0190861
IF: 4
2024-02-26
Applied Physics Letters
Abstract:With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with temperature sensing. The NBT epitaxial films with strong polarization strength and suitable oxygen vacancy concentration were obtained by temperature adjustment (700 °C). In addition, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated in ferroelectric memristor devices of Pt/NBT/SrRuO3 (SRO)/SrTiO3 (STO). More importantly, we have designed a neuronal circuit to confirm that NBT-FMD can serve as temperature receptors on the human skin, paving the way for bio-inspired application.
physics, applied
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