Abstract:Organic memristors with uniform resistive switching behavior can mimic the functions of biological synapses, making them promising candidates for brain-inspired neuromorphic computing. Among these, organic memristors based on ion migration mechanisms have been widely studied because of the directional movement of anions such as metal cations and oxygen ions under electric fields, which is more similar to the biological process of ion release in synapses. However, controlling these ion dynamic processes is often challenging, with rapid ion migration leading to unstable device performance and reduced accuracy. Here, we present the fabrication of a memristor utilizing an organic heterojunction. The built-in electric field generated by the heterojunction slows down and orders the ion migration process, enabling the device to exhibit a wide range of precise multiple conductive states (10 −6 –10 −3 A). This provides an advantage in simulating synaptic behavior. The continuously adjustable conductance in organic heterojunction memristors successfully mimics various forms of synaptic plasticity, including paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), short-term plasticity (STP) and long-term plasticity (LTP), as well as higher-order functionalities such as simulating Pavlovian classical conditioning reflex experiment and experiential learning function. Furthermore, by utilizing X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) depth profiling, we have gained clear insights into the distribution and movement of ions of different compositions within the device, elucidating the underlying reasons for resistance changes. These findings provide reliable references and demonstrations for the design and control of future ion migration-type memristors.

Polymeric Memristor Based Artificial Synapses with Ultra‐Wide Operating Temperature

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A Monochloro Copper Phthalocyanine Memristor with High‐Temperature Resilience for Electronic Synapse Applications

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

High-temperature-resistant Synaptic Transistors for Neuromorphic Computing

Robust Polyethylenimine Electrolyte for High Performance and Thermally Stable Atomic Switch Memristors

Synaptic Learning and Memory Functions Achieved in Self-rectifying BFO Memristor under Extreme Environmental Temperature

Ultra-wide Temperature Electronic Synapses Based on Self-Rectifying Ferroelectric Memristors

Room-temperature Developed Flexible Biomemristor with Ultralow Switching Voltage for Array Learning.

Humidity‐Enabled Organic Artificial Synaptic Devices with Ultrahigh Moisture Resistivity

Temperature-modulated switching behaviors of diffusive memristor for biorealistic emulation of synaptic plasticity

A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

Side Chain Engineering Enhances the High-Temperature Resilience and Ambient Stability of Organic Synaptic Transistors for Neuromorphic Applications

Organic High‐Temperature Synaptic Phototransistors for Energy‐Efficient Neuromorphic Computing

Light-/steam-driven Polymeric Crosslinking with Porous Multistructure Pattern for Ultrastable and Fast-Speed Memory

Polymer Memristor for Information Storage and Neuromorphic Applications

Organic Heterojunction Memristors with Enhanced Tunable Resistive States for Artificial Synapses

Synaptic Properties Considering Temperature Effect in HfOx-based Memristor - Demonstration of Homo-Thermal Synaptic Behaviors

A high linearity and multilevel polymer-based conductive-bridging memristor for artificial synapses

High synaptic plasticity enabled by controlled ion migration in organic heterojunction memristors

N -Doped Graphene/MXene Nanocomposite as a Temperature-Adaptive Neuromorphic Memristor