Humidity‐Enabled Organic Artificial Synaptic Devices with Ultrahigh Moisture Resistivity

Jiayu Li,Yangzhou Qian,Wen Li,Yen‐Hung Lin,Haowen Qian,Tao Zhang,Ke Sun,Jin Wang,Jia Zhou,Ye Chen,Jintao Zhu,Guangwei Zhang,Mingdong Yi,Wei Huang
DOI: https://doi.org/10.1002/aelm.202200320
IF: 6.2
2022-06-30
Advanced Electronic Materials
Abstract:A humidity‐enabled organic memristor using hexadecafluoro copper phthalocyanine is fabricated. The proton conduction mechanism‐based memristive devices maintain reliable memristive switching behavior after 1 year of exposure to air at 60% high relative humidity and remaining operational when immersed in water for 96 h. This work may allow the use of organic memristors as robust humidity‐tolerant artificial synapses for neuromorphic applications. Organic memristors with homogeneous resistive switching behaviors can emulate the functionalities of biological synapses, making them promising candidates for use in brain‐inspired neuromorphic computing. Among various environmental parameters, humidity affecting device operational stability is a critical issue that organic memristors face in practical applications. A high humidity resistant organic memristor is demonstrated here using a small molecule material F16CuPc. Unencapsulated devices show excellent moisture stability, maintaining reliable memristive switching behavior after 1 year of exposure to air at 60% high relative humidity and remaining operational when immersed in water for 96 h. A proton conduction mechanism is discovered responsible for the resistive switching effect. The continuously adjustable conductance in F16CuPc‐based memristive devices enables the mimicking of biological synapse functions. These results open up a path to a humidity tolerant neuromorphic computing system based on high humidity resistant artificial synapse devices.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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