Humidity Effect on Resistive Switching Characteristics of the CH 3 NH 3 PbI 3 Memristor

Xiaohan Zhang,Xiaoning Zhao,Xuanyu Shan,Qiaoling Tian,Zhongqiang Wang,Ya Lin,Haiyang Xu,Yichun Liu

DOI: https://doi.org/10.1021/acsami.1c05590

2021-06-08

Abstract:Organic–inorganic hybrid halide perovskites (OIHPs) with inherent mixed ionic–electronic conduction ability have been proposed as promising candidates for memristors with unique optoelectronic characteristics. Despite the great achievements toward understanding the working mechanism and exploring their functionality as water-sensitive materials, the humidity effect on the resistive switching (RS) characteristics still remains to be studied. This study investigates the humidity effect on the RS characteristics of Au/CH₃NH₃PbI₃/FTO memristor. The memristor works well at moderate relative humidity (RH, &lt;75%) and degrades rapidly at higher RH of 90%. An obvious decrease in low resistance states on increasing the RH level is observed, which could be attributed to water-induced reduction of the iodide migration barrier. Raman and X-ray diffraction analyses indicate that the migration barrier reduction possibly originated from the weakening of the Pb–I bond caused by the intercalation of water molecules into the crystal lattice. The humidity-sensitive RS characteristics of the memristor could extend the scope of OIHP application for sensing and security applications and also prompt researchers to pay attention to the humidity effect on memristor devices with OIHPs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05590?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05590</a>.Schematic diagram of the RH-dependent resistive switching measurement setup; typical electroforming curve of the memristor; schematic diagram of a test setup for pulse measurement; the endurance characteristics of the memristor measured in pulse mode at 5% RH, 75% RH, and 90% RH; dissolving speed comparisons of reported transient memristors and the present Au/OIHPs/FTO device; the log <i>I</i>–log <i>V</i> curves of the memristor measured at 5% RH, 50% RH, 75% RH, and 90% RH (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05590/suppl_file/am1c05590_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology