Abstract:Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.

Synaptic memristors based on flexible organic pentacene thin films by the thermal evaporation method for neuromorphic computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing

A multilevel resistive switching memristor based on flexible organic-inorganic hybrid film with recognition function

Polyelectrolyte Bilayer-Based Transparent and Flexible Memristor for Emulating Synapses

Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing

Flexible Transparent Organic Artificial Synapse Based on the Tungsten/Egg Albumen/Indium Tin Oxide/Polyethylene Terephthalate Memristor.

Flexible Organic Optoelectronic Devices for Neuromorphic Computing

An Organic Flexible Artificial Bio-Synapses with Long-Term Plasticity for Neuromorphic Computing.

Flexible, Transparent And Wafer‐scale Artificial Synapse Array Based on TiOx/Ti3C2Tx Film for Neuromorphic Computing

Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications

A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing

Organic Synaptic Devices for Neuromorphic Systems

A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Bend‐Resistant and Energy‐Friendly GO‐PVA/PVA Polymer Electret Synaptic Transistors for Neuromorphic Computations

Flexible Memristor Based on Lead‐Free Cs2AgBiBr6 Perovskite for Artificial Nociceptors and Information Security

Synaptic behaviors in flexible Au/WO /Pt/mica memristor for neuromorphic computing system

Synaptic Plasticity And Learning Behaviours Mimicked Through Ag Interface Movement In An Ag/Conducting Polymer/Ta Memristive System

Enhanced resistance switching in ultrathin Ag/SrTiO 3 /(La,Sr)MnO 3 memristors and their long-term plasticity for neuromorphic computing