Abstract:A systematic investigation is undertaken for studying the optoelectronic properties of single crystal diamond (SCD) grown by microwave plasma chemical vapor deposition (SCD). It is indicated that, without intentional doping and surface treatment during the sample growth, the terahertz (THz) optical conduction in SCD is mainly affected by surface H-terminations, -OH-, O- and N-based functional groups. By using THz time-domain spectroscopy (TDS), we measure the transmittance, the complex dielectric constant and optical conductivity sigma(omega) of SCD. We find that SCD does not show typical semiconductor characteristics in THz regime, where sigma(omega) cannot be described rightly by the conventional Drude formula. Via fitting the real and imaginary parts of sigma(omega) to the Drude-Smith formula, the ratio of the average carrier density to the effective electron mass gamma = n(e)/m*, the electronic relaxation time tau and the electronic backscattering or localization factor can be determined optically. The temperature dependence of these parameters is examined. From the temperature dependence of gamma, a metallic to semiconductor transition is observed at about T = 10 K. The temperature dependence of tau is mainly induced by electron coupling with acoustic-phonons and there is a significant effect of photon-induced electron backscattering or localization in SCD. This work demonstrates that THz TDS is a powerful technique in studying SCD which contains H-, N- and O-based bonds and has low electron density and high dc resistivity. The results obtained from this study can benefit us to gain an in-depth understanding of SCD and may provide new guidance for the application of SCD as electronic, optical and optoelectronic materials.

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