Abstract:Single-crystal diamond (SCD) microelectromechanical systems (MEMS) resonators with lower energy dissipation and higher quality (Q) factors have always been pursued for the development of high-sensitivity and high signal-to-noise ratio (SNR) MEMS sensors. The intrinsic loss such as the crystal quality and extrinsic loss of clamping loss have been examined to improve the Q factors of SCD MEMS resonators. Nevertheless, the surface termination induced energy dissipation has rarely been known due to the lack of high crystal quality diamond resonators and in-situ characterization. Here we examine the effect of oxygen-termination on the surface energy dissipation of SCD cantilevers by in-situ heating these cantilevers in a high vacuum chamber. After thermal treatment of the cantilevers at 933 K, the Q factor of the cantilever is improved from 2.8x10 5 to 3.3x10 5 (i.e. the 120 μm-long). The resonance frequency increase confirms the desorption of surface adsorbates. Compared to silicon, on which a native solid-state oxide exists, the surface oxygen-termination induced loss in diamond MEMS is much smaller. The non-existence of native oxides on diamond surface is an obvious merit toward ultra-high Q factor MEMS resonators.

Oxygen-termination effect on the surface energy dissipation in diamond MEMS