Electrostatic-excited Silicon unitized micromechanical resonator

Zhonghe Jin,Yaolin Wan,Yigang Xu,Chun Ding,FengQiu Chen

1995-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A new structure of silicon-unitized resonator was proposed and realized, which is made by SDB technique. Electrostatic force was analyzed. The experiments show that the resonance frequency of the device is about 5.86kHz and the Q-factor is above 600 in 10Pa vacuum.

What problem does this paper attempt to address?

Thermally Excited Micromechanical Vacuum Resonator

YQ Wang,ZH Jin,YL Wang,C Ding

DOI: https://doi.org/10.1109/icsict.1998.786540

1998-01-01

Abstract:A micromechanical resonator is proposed and realized. It consists of a single-crystal silicon beam and two P-type silicon resistors. One resistor is used to excite the vibrating beam and the other to sense vibration of the beam. The dimensions of the resonator are about 4/spl times/2.5 mm/sup 2/, the resonant frequency is about 7.8 KHz, Q factor about 190 in air and above 2500 in vacuum degree of 7.5/spl times/10/sup -4/ Pa. The theory of thermal excitation is analyzed and the characteristics of the resonator are tested. We conclude that the resonator can be applied to vacuum measurement by the means of closed-loop resonating circuit. The design and realization of the circuit are described.
Electrostatic resonator with second superharmonic resonance

Zhonghe Jin,Yuelin Wang

DOI: https://doi.org/10.1016/S0924-4247(97)01630-0

1998-01-01

Abstract:An electrostatic resonator is fabricated on single-crystal silicon by micromachining technologies. Side-wail doping is proposed and realized to form an electrical connection from the excitation electrode to the surface of the device. It is found that the second harmonic in the electrostatic force plays an important role in the resonator's response. The resonator can work on second superharmonic resonance (SSHR). The behaviour of the SSHR is compared with that of the normal resonance. The results show that using the SSHR as a signal, instead of the normal resonance, can suppress electrical crosstalk and increase the signal-to-crosstalk ratio. (C) 1998 Elsevier Science S.A.
Discussion on the optical-coupling in silicon optical-type micromechanical sensors

Ding Chun,Yaqiang Wang,Yuelin Wang-,Zhonghe Jin

DOI: https://doi.org/10.1109/ICSICT.1998.786542

1998-01-01

Abstract:A flow-sensor and a resonator are fabricated on silicon substrate using the micromechanical technology. The devices are with a structure based on a silicon cantilever with waveguide on the surface to detect the movement of the silicon cantilever. The method to couple the laser into the waveguide is discussed and the performance of the fabricated devices are characterized.
The Optical Excitation of Silicon Microresonator

喻浩,丁纯,金仲和,徐义刚,王跃林

DOI: https://doi.org/10.3321/j.issn:0372-2112.1998.06.006

1998-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:The optical experimental excitation of a silicon cantilever resonator is studied theoretically and experimentally. The amplitude-frequency response and the relationship between the output of resonators and the position of excitation are discussed. These results provide the theoretical basis for the optical-micro-mechanical resonators.
Relationship between silicon micromechanical resonators and excited point

Hao Yu.,Chun Ding,Yuelin Wang-,Yaqiang Wang,Zhonghe Jin,Yigang Xu

1998-01-01

Abstract:The optically excited vibrations of silicon cantilever resonators are studied. The theoretical results and experimental results of cantilever's coherent frequency are given and the effect of excited point on the vibration of the cantilever is discussed. The amplitude of output signal is related with the position of optical excited point and the vibration mode. We can get the highest amplitude by selecting the center point of two nodal of the vibration mode, then the amplitude decreases with the optical beam move to the nodal of the mode, where we get the lower signal. This result is satisfactory to other micromechanical resonators with point heating excitation.
High Q single crystal silicon micromechanical resonators with hybrid etching process

Guoqiang Wu,Dehui Xu,Bin Xiong,Yuelin Wang

DOI: https://doi.org/10.1109/JSEN.2012.2191772

2012-01-01

Abstract:This letter presents a hybrid silicon etching-based technique for single crystal silicon micromechanical resonators fabrication. The proposed method differs from previous works by combining a front-side wet anisotropic pre-etching and a front-side DRIE dry anisotropic post-etching in micromachining micromechanical resonators. The wet etching is used to pre-etch a cavity for structure release in the substrate, while the post-dry etching is employed to fabricate and release the resonator structures simultaneously. A 4.126-MHz square plate Lamé-mode resonator has been successfully fabricated using this approach. An impressive quality factor (Q) as high as 5.34×10 6 is experimentally measured at a pressure of 0.06 mbar, corresponding to a frequency-Q product of 2.2×10 13. © 2012 IEEE.
New silicon micromechanical resonant viscosity vacuum gage

Yaqiang Wang,Zhonghe Jin,Yuelin Wang-,Chun Ding

1997-01-01

Abstract:A new type of resonant viscosity vacuum gage based on the silicon micromechanical resonant vacuum sensor by electrostatic excitation was developed. It can measure the pressures over a range from 1 Pa to 1.33��103 Pa. The theoretical analysis and experimental results were presented.
Design on electrostatically excited silicon micromachined resonant pressure sensor

Sen REN,Wei-zheng YUAN,Jin-jun DENG,Xiao-dong SUN

DOI: https://doi.org/10.3969/j.issn.1000-9787.2014.01.017

2014-01-01

Abstract:A silicon micromachined resonant pressure sensor with electrostatic excitation and capacitive detection is designed,which uses improved lateral dynamically balanced double-ended tuning fork resonator. The fabrication process is based on silicon-on-insulator(SOI) wafer. Connecting truss has been developed to restrain perpendicular position shift of the resonator when the diaphragm deflects. Considering weak signal and same frequency interference in detection,several methods such as guard electrodes, reduced AC drive voltage amplitude,differential capacitive detection and scheme of high-frequency carrier modulation and demodulation is taken.Furthermore,open-loop measurement system is designed based on interface circuit,and preliminary character measurements is carried out under atmospheric pressure packaging condition. Testing results show that the fundamental resonant frequency is 33. 886 kHz,and vibration quality factor is 1222. Over the gauge pressure range of 0 ~ 280 kPa,the nonlinearity is 0. 018 % FS,the hysteresis error is 0. 176 % FS,the repeatability is 0. 213 % FS,and the average temperature drift of the resonator is- 0. 037 % / ℃ at the range of- 20~ 60 ℃.
A Novel Design of Micro-Mechanical Silicon Resonator

LIANG Fan,PENG Zhi-ping,FAN Shang-chun

DOI: https://doi.org/10.3969/j.issn.2095-1248.2006.05.024

2006-01-01

Abstract:We analysis the electro-static actuation and mechanical trait and get the analytical resolutions on resonant frequency and resonant amplitude of movable combs which supplies the basement of resonator design.Four resonator structures are designed with the consideration of different influence of different electro-static actuation on resonator.We select the key parameters reasonable and enhance the restrain efficient of side-instability and conglutination. FEA(finite element analysis) method was used to simulate and calculate the modal and natural frequencies with the consideration of the silicon micro machining property and feasibility.It reveals that the novel resonate accelerometer is characterized of high working condition through theoretical analysis and parameters optimization on entire structure.
A High-Performance Bulk Mode Single Crystal Silicon Microresonator Based On A Cavity-Soi Wafer

Guoqiang Wu,Dehui Xu,Bin Xiong,Yuelin Wang

DOI: https://doi.org/10.1088/0960-1317/22/2/025020

2012-01-01

Journal of Micromechanics and Microengineering

Abstract:A cavity-silicon-on-insulator (SOI)-based single crystal silicon (SCS) micromechanical resonator has been demonstrated in this paper. The most distinguishing feature of this method is that it solves the restrictions of being released from the sacrificial layer. The resonator structures can be fabricated and released in one step using dry anisotropic etching. The differential drive, single-ended sense configuration is implemented to measure the electrical characterization of the fabricated resonator. The fabricated square plate resonator has been excited in the Lame mode at a resonant frequency of 4.126 MHz and exhibits a quality factor (Q) as high as 5.49x10(6) at a pressure of 0.05 mbar. This result corresponds to a frequency-Q product of 2.27x10(13), which is the highest value demonstrated to date for silicon-based resonators as far as we know. The dependence of Q and resonant frequency on the operating pressure is measured and characterized. The temperature stability of the device is also demonstrated, with the temperature coefficient of resonant frequency less than -20.8 ppm degrees C-1 in the temperature range from -10 to 60 degrees C. The high performance of the resonator not only benefits from the superior performance of SCS as a mechanical material, but also the merit of the cavity-SOI structure.
Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators

Haihua Wu,Zilong Zhang,Liwen Sang,Tiefu Li,Jianqiang You,Yingjie Lu,Yasuo Koide,Meiyong Liao

DOI: https://doi.org/10.1016/j.diamond.2020.107711

IF: 3.806

2020-01-01

Diamond and Related Materials

Abstract:We report on the electrical readout of the resonance frequency from single crystal diamond (SCD) cantilever resonators. Due to the deep nature of the dopants in SCD, metallic electrodes with nanometer thickness are deposited on the SCD resonators as piezoresistor for sensing. A cantilever sample with resonance frequency 411.48 kHz and Q factor around 16,000 at RT is demonstrated through the electrical readout. Because of the thin film nature of the sensing electrodes, little energy dissipation is imposed to the SCD cantilever. Frequency shifting due to the change of readout voltage is also investigated. The present work provides the avenue for the applications of SCD MEMS sensors with other circuits.
Micromechanical resonant electrostatic charge sensor with micro-leverage mechanisms

Jiuxuan Zhao,Hong Ding,Jin Xie

DOI: https://doi.org/10.1109/NEMS.2015.7147386

2015-01-01

Abstract:A micromachined resonant electrostatic charge sensor with enhanced responsivity by introducing dual single-stage micro-leverage mechanisms is presented. The sensor is based on the detection of resonant frequency shift of a single-crystal silicon double-ended tuning fork (DETF) element due to the axial compressive generated by the additional charge and transformed by the micro-levers. An analytic model was derived in detail comprising both mechanical and electrical subsystems. The quality factor of the resonator is about 4,900 at an operating pressure of 40 mTorr, with a nominal resonant frequency of 139 kHz. The amplification factor of the double micro-levers excides 8. In addition, we experimentally demonstrated that the responsivity enhanced and the sensitivity is 21 fC under 4 ppm frequency fluctuation.
Design and Analysis of Silicon Resonant Accelerometer

Jing Li,Shangchun Fan,Zhanshe Guo

DOI: https://doi.org/10.19026/rjaset.5.5048

2013-01-01

Research Journal of Applied Sciences Engineering and Technology

Abstract:In this study, we present an approach for micromechanical resonant accelerometer design, structural optimization and testing method of a kind of resonant accelerometer which is excited by the electrostatic force and detected by the change of capacitance. The structure parameters' influence on capability parameters are analyzed by MATLAB and the mechanical and model analysis of structure are carried out by ANSYS, also, we optimized the structure parameters. Simulating results validates the design thought.
A micromachined silicon resonant accelerometer

Zhiyong Chen,Bin Zhou,Rong Zhang

2009-01-01

Abstract:The structure fabrication circuit scheme and testing of a MEMS silicon vibrating beam accelerometer was described. The sensing structure has 2 differential double-ended tuning forks and levers was utilized to increase the stress in the beams 'Thin neck' link structure was designed to improve the stress ratio and the leverage ratio was optimized. The sensor was fabricated by Silicon-on-glass process. Amplitude controlled self-oscillating loop was adopted to drive the sensor. Test results showed a scale factor of 157.5 Hz/g scale factor nonlinearity of 0.083% in ±1 g measuring range and a noise of 10.51 μg/rtHz.
Investigation Of Nano Sic Resonator

Zhe Chen,Dayu Tian,Guobing Zhang,Haixia (Alice) Zhang

2007-01-01

Abstract:In this paper, a nano SiC resonator with high frequency and high Q factor was developed. This resonator utilized as-deposited PECVD SiC thin film as its resonance diaphragm, a thin layer of tungsten as its upper electrode, the thickness of this combined thin film is about 680 nm. The fabrication process is simple and under low temperature (<300 degrees C), which make it could be integrated with CMOS process. Tested by a nano-based method, this SIC nano Resonator shows good resonance performance at 1.98MHz and has high Q factor about 440. Due to its material merits, this high quality nano SiC resonator could be applied in harsh environment, such as, high temperature, high pressure and erosion conditions.
Frequency response of a new kind of silicon nanoelectromechanical systems resonators

Hong Yu,Weimin Yuan,Chunsheng Liu,Dongxu Yue,Shijie Wu,Yong Gu,Zhiyuan Chen,Qing'an Huang

DOI: https://doi.org/10.3969/j.issn.1003-7985.2012.03.010

2012-01-01

Abstract:Diffraction effects will bring about more difficulties in actuating resonators,which are electrostatically actuated ones with sub-micrometer or nanometer dimensions,and in detecting the frequency of the resonator by optical detection.To　avoid　the　effects　of　diffraction, a　new　type　of nanoelectromechanical　systems　(NEMS)　resonators　is fabricated and actuated to oscillate. As a comparison, a doubly clamped silicon beam is also fabricated and studied.The smallest width and thickness of the resonators are 180 and 200 nm,respectively.The mechanical oscillation responses of these two kinds of resonators are studied experimentally.Results show that the resonant frequencies are from 6.8 to 20MHz,much lower than the theoretical values.Based on the simulation,it is found that over-etching is one of the important factors which results in lower frequencies than the theoretical values.It is also found that the difference between resonance frequencies of two types of resonators decreases with the increase in beam length.The quality factor is improved greatly by lowering the pressure in the sample chamber at room temperature.
A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

Guoqiang Wu,Dehui Xu,Bin Xiong,Yuelin Wang

DOI: https://doi.org/10.1007/s00542-011-1372-1

2011-01-01

Microsystem Technologies

Abstract:In this paper, a novel method of fabricating micromachined single crystal silicon bulk mode resonators is demonstrated. The most distinguishing feature of this method is that the resonator structure is fabricated and released simultaneously in the end of the process, as a cavity for structure release is pre-etched in the substrate layer. The advantages of this process include: simplifying the fabrication process by fabricating and releasing the device structure simultaneously; enhancing fabrication yield through eliminating the sacrificial release step needed for existing process. The complete process has been validated and prototypes have been fabricated. The transmission performance of a 4.13 MHz Lamé mode square resonator fabricated using this method is presented, with a quality factor of 8,400 in air and exceeding one million at pressure of 0.11 mbar, respectively.
A Novel Silicon Micromachined Resonant Accelerometer

钟莹,张国雄,李醒飞

DOI: https://doi.org/10.3969/j.issn.1672-6030.2003.01.007

2003-01-01

Abstract:This paper proposes a novel silicon micromachined resonant accelerometer. By its quasi-digital output, the trouble in detecting feeble analog signals from most MEMS devices could be averted. In this design, two double-ended tuning forks (DETF) serve as the stress-sensitive resonators. When an external acceleration is applied, the inertial force generated by the proof mass imposes on the fork axially through the cantilever, consequently the shift in the resonant frequency of the fork reflects the acceleration. Electrostatic combs are attached to each tine in order to drive the fork to resonate as a voltage is applied, and the capacitance between the fixed and movable combs is used to sense the resonant frequency. This sensor is fabricated by bulk-micromach-ining, and the process is presented. Finite element analysis software is used to simulate the performance of the sensor. As a result, the scale factor is estimated to be 2/g Hz.
Design, Analysis, and System-Level Simulation of A Micromachined Resonant Charge Sensor with Microleverage Mechanisms

Jiuxuan Zhao,Hong Ding,Wen Wang,Jin Xie

DOI: https://doi.org/10.18494/sam.2015.1193

IF: 1.2

2015-01-01

Sensors and Materials

Abstract:In this paper, a micromechanical electrostatic resonant charge sensor with responsivity enhanced by introducing dual single-stage microleverage mechanisms (microlevers) is presented. The sensor is based on the mechanism of detecting the resonant frequency shift of a single-crystal silicon double-ended tuning fork (DETF) element due to the axial compression generated by the additional charge and transformed by the microlevers. An analytic model comprising both mechanical and electrical subsystems was derived. The system-level simulation was carried out to optimize the critical dimensions and responsivity that coincides with the theoretical solution. The resonator has a nominal resonant frequency of 166 kHz and the amplification factor is more than 8. Simulation results suggest that the responsivity of the charge sensor is 1.38 x 10(-3)Hz/fC(2). Finally, the device was fabricated in a commercial standard siliconon-insulator (SOI) micromachining process to reduce the parasitic capacitance more effectively by back-side release.
Research of a Novel Micromachined Resonant Pressure Sensor

史晓晶,陈德勇,王军波,毋正伟,刘磊

DOI: https://doi.org/10.3969/j.issn.1004-1699.2009.06.006

2009-01-01

Abstract:A novel resonant pressure sensor structure is proposed.Electromagnetic excitation and differential detection are adopted.30μm diffused(100) silicon is used for the resonator,thus the resonator and the pressure diaphragm can be fabricated on the same silicon substrate without bonding,which can avoid the stress from the bonding process.The theoretical analysis,FEA-ansys simulation,fabrication process,and the testing experiments are described.In the full scale 0～100 kPa,the experiments results show that the quality factor(Q) is better than 10 000 in low vacuum,the resolution is 1/10 000,the nonlinearity is 0.62%,and the differential sensitivity is 200 Hz /kPa.

Electrostatic-excited Silicon unitized micromechanical resonator

Thermally Excited Micromechanical Vacuum Resonator

Electrostatic resonator with second superharmonic resonance

Discussion on the optical-coupling in silicon optical-type micromechanical sensors

The Optical Excitation of Silicon Microresonator

Relationship between silicon micromechanical resonators and excited point

High Q single crystal silicon micromechanical resonators with hybrid etching process

New silicon micromechanical resonant viscosity vacuum gage

Design on electrostatically excited silicon micromachined resonant pressure sensor

A Novel Design of Micro-Mechanical Silicon Resonator

A High-Performance Bulk Mode Single Crystal Silicon Microresonator Based On A Cavity-Soi Wafer

Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators

Micromechanical resonant electrostatic charge sensor with micro-leverage mechanisms

Design and Analysis of Silicon Resonant Accelerometer

A micromachined silicon resonant accelerometer

Investigation Of Nano Sic Resonator

Frequency response of a new kind of silicon nanoelectromechanical systems resonators

A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

A Novel Silicon Micromachined Resonant Accelerometer

Design, Analysis, and System-Level Simulation of A Micromachined Resonant Charge Sensor with Microleverage Mechanisms

Research of a Novel Micromachined Resonant Pressure Sensor