Hydrogen Passivation of Iron-Acceptor Pairs in Boron and Gallium Co-Doped Crystalline Silicon

Xiaotong Hou,Shuai Yuan,Xuegong Yu,Xiaodong Zhu,Deren Yang
DOI: https://doi.org/10.7567/1882-0786/ab58e2
IF: 2.819
2019-01-01
Applied Physics Express
Abstract:The hydrogen (H) passivation behaviors of iron-acceptor (Fe-Ac) pairs in boron and gallium co-doped Czochralski silicon are studied. H atoms introduced by a piranha solution followed by reverse bias annealing can fully passivate the electric activity of Fe-B and Fe-Ga pairs. However, the passivation effect can be partially deactivated when annealed in 80 degrees C-200 degrees C and be reactivated when annealed at 250 degrees C. The temperature of the highest failure fraction for passivated Fe-B and Fe-Ga pairs are 80 degrees C and 200 degrees C, respectively. A mechanism was given that H atoms released from the dissociation of acceptor-hydrogen pairs can reactivate the passivation. (C) 2019 The Japan Society of Applied Physics
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