Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

Oxygen-assisted Synthesis of Hbn Films for Resistive Random Access Memories

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Synthesis of Hexagonal Boron Nitride Thin Film on Pt Substrates for Resistive Switching Memory Applications

Atomic Layer Deposition Films for Resistive Random‐Access Memories (Adv. Mater. Technol. 16/2024)

Resistance Switching Behaviors of Continuous-Thick Hbn Films Fabricated by Radio-Frequency-sputtering

Resistive Switching of Self-Assembly Stacked H-Bn Polycrystal Film

A Flexible Nickel-Oxide-Based RRAM Device Prepared Using the Solution Combustion Method

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

The Effect of High/low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Defect Engineering in Multilayer H-Bn Based RRAM by Localized Helium Ion Irradiation

Thickness dependent phase transformation and resistive switching performance of HfO 2 thin films

Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

Building resistive switching memory having super-steep switching slope with in-plane boron nitride

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment