Abstract:Energy band diagrams are widely utilized to explain the switching mechanism of resistance random access memory (RRAM). However, a precise and quantitative band theory is still lacking in this field. Although HfS2 has good applications in many fields because of its good electrical and optical properties, its applications in RRAM have seldom been reported. In this work, the exfoliated nanosheets of HfS2 were utilized to fabricate memory devices with a structure of Pt/Al/HfS2/p(+)-Si, which show typical bipolar resistive switching behavior with high switching voltage and a small ratio of high and low resistive states (R-ratio). According to the density functional theory (DFT) calculation results of energy band diagrams, instead of conductive filament formation in other resistive switching materials, the doping of sulfur vacancy (V-S) of 3.8% is already enough to change the whole HfS2 layer from the semiconductor to the metal. The transition is caused by the change in the V-S doping concentration from low to high, which is the result of the generation and movement of V-S under an electric field. The DFT also calculated that HfS2 devices utilizing Indium Tin Oxide as the bottom electrode can show bipolar resistive switching behavior with lower switching voltage and a higher R-ratio than those utilizing p(+)-Si, which is confirmed by the experimental results. The DFT calculation can be utilized for both explaining the switching mechanism and designing the device structure to optimize the switching characteristics.

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Building resistive switching memory having super-steep switching slope with in-plane boron nitride

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Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

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Oxygen-assisted Synthesis of Hbn Films for Resistive Random Access Memories

Two-dimensional Hexagonal Boron Nitride Based Memristor

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

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Introduction of Defects in Hexagonal Boron Nitride for Vacancy-Based 2D Memristors.

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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024)

Resistive switching behaviors and mechanisms of HfS<sub>2</sub> film memory devices studied by experiments and density functional theory calculations