Abstract:A bipolar resistive switching (RS) behavior with an asymmetry I–V curve was impressively observed in the Ag/Sb2Te3/Pt heterojunction. The heterojunction with low operating voltage (∼0.6 V) could be repeatedly cycled more than 1000 times between high- and low-resistance states steadily, the cumulative probability curves of which were substantially parallel. Numerical simulation was performed to clarify the electrical conduction mechanism of different resistance states. Based on the results, the synergy model of the conductive filament and the Schottky emission is proposed. This work enriches the material system of resistive random access memory, which is conducive to a profound understanding of the physical mechanism behind the RS behavior, thereby facilitating the further application of memristors in the field of synaptic bionics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00341?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00341</a>.Endurance test sweeping cycles; XRD; SEM–EDS images; EDS analysis of the Sb2Te3; statistic distribution of the Vset and Vreset; box plot of the HRS and LRS of the Ag/Sb2Te3/Pt device; numerical simulation; and comparison of this work with oxide-based devices (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00341/suppl_file/el1c00341_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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