Abstract:Recent developments in flexible memories, neuromorphic computing, and other fields have generated a lot of interest in memristive devices based on two-dimensional materials. Due to its capacity for data storage and quick working speed, two-terminal non-volatile memory devices are more efficient and incredible. The need for memory that is flexible, low-powered, and ultra-thin is rising as a result of the rapidly developing fields of healthcare, wearable electronics, and the Internet of Things. The current study observes the effects of pure hexagonal boron nitride (hBN) inclusion on the resistive switching properties of tin oxide (SnO 2 )-based flexible resistive memory device, which was synthesized by a straightforward hydrothermal method. The synthesized nanocomposite powders were characterized by X-ray diffraction and Raman spectroscopic methods. A pure SnO 2 and SnO 2 -hBN (5, 7, and 10 wt.%) nanocomposite film was spin-coated on an ITO-PET flexible substrate to create the memory device. To finish the memory device, thermal evaporation was used to create Al top electrodes with a thickness of less than 100 nm. After comparing the resistive switching performance of the created devices, it was found that the memory device using 7% hBN in SnO 2 had a higher I ON /I OFF ratio of 1000, whereas the samples including 5 and 10 wt.% hBN had ratios of 96 and 10, respectively. In addition, the retention and endurance behaviour of the fabricated 7%SnO 2 -hBN composite film-based device was studied for up to 1.5 × 10 4 and 100 cycles, respectively, with no degradation in the memory window. It has been noted that the current metal oxide–2D hybrid nanocomposite is a promising option for low-power, flexible, and enduring non-volatile memory applications.

Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications

Synthesis of Hexagonal Boron Nitride Thin Film on Pt Substrates for Resistive Switching Memory Applications

A Sub-500 Mv Monolayer Hexagonal Boron Nitride Based Memory Device

Thinnest Nonvolatile Memory Based on Monolayer H-Bn

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Oxygen-assisted Synthesis of Hbn Films for Resistive Random Access Memories

A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Two-dimensional Hexagonal Boron Nitride Based Memristor

Resistance Switching Behaviors of Continuous-Thick Hbn Films Fabricated by Radio-Frequency-sputtering

Introduction of Defects in Hexagonal Boron Nitride for Vacancy-Based 2D Memristors.

Observation of Resistive Switching in a Graphite/hexagonal Boron Nitride/graphite Heterostructure Memristor

Building resistive switching memory having super-steep switching slope with in-plane boron nitride

Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor

Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Resistive Switching of Self-Assembly Stacked H-Bn Polycrystal Film