Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory

Low‐Energy Oxygen Plasma Injection of 2D Bi 2 Se 3 Realizes Highly Controllable Resistive Random Access Memory

Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides

Novel 2D Materials-based Resistive Devices

Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

Individual Zn 2 SnO 4 -Sheathed ZnO Heterostructure Nanowires for Efficient Resistive Switching Memory Controlled by Interface States

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

A Resistive Device with Electrolyte As Active Electrode

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Crystallographic Orientation–dependent Resistive Switching Devices Based on Hybrid Ga 2 O 3 Thin Films

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

Observation of nonvolatile resistive switching behaviors in 2D layered InSe nanosheets through controllable oxidation

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Deposition of Bi_2O_3 Thin Films and Their Resistive Switching Characteristics

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.