Abstract:For the three kinds of composite materials, i.e., Cu(111)/HfO2(001), Cu(111)/HfO2(010) and Cu(111)/HfO2(100), the first-principles method based on the density functional theory is adopted to calculate their rates of mismatching of interface model, interface adhesion energies, the electric charge densities, the electron localization functions, and the charge density differences separately. The results indicate that the rate of mismatching of the Cu(111)/HfO2(010) interface model is lowest and its interface adhesion energy is higher than the others', which means that the Cu(111)/HfO2(010) is most stable. From the analyses of charge densities and electron localization functions of the three interfaces, it can be found that only the Cu(111)/HfO2(010) interface is able to form the connective electronic channel along the vertical direction of the Cu electrode. This indicates that electrons possess the localizabilty and connectivity along the HfO2(010) direction, which corresponds to the switching-on direction of the resistive random access memory (RRAM) device. The charge density difference analysis reveals that the charge density distributions overlap, the electrons transfer mutually and bond at the interface of the Cu(111)/HfO2(010). In addition, based on the model of Cu (111) /HfO2 (010) interface, the formation energies of the interstitial Cu at different positions are also calculated. The results show that the closer to the interface the Cu atom, the more easily it migrates into HfO2. This indicates that the electrochemical reaction takes place more easily under the applied voltage, which results in the formation and rupture of Cu conductive filaments. All the above findings will provide a theoretical guidance for improving the performances of RRAM devices.

The Effect of High/low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface

Space electric field concentrated effect for Zr:SiO 2 RRAM devices using porous SiO 2 buffer layer

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO<sub>2</sub>/ZrO<sub>2</sub>/Pt

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Design of a Two-Layer Structure to Significantly Improve the Performance of Zinc Oxide Resistive Memory

Oxygen-assisted Synthesis of Hbn Films for Resistive Random Access Memories

Enhanced Resistive Switching Performance and Structural Evolution of NiO/Nb2O5-x Bilayer Memristive Device

Improved Resistive Switching Performance and Realized Electric Control of Exchange Bias in a NiO/HfO2 Bilayer Structure.

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Composite Interfaces and Electrode Properties of Resistive Random Access Memory Devices

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Effect of charge quantity on conduction mechanism of high-And low-resistance states during forming process in a one-Transistor-one-resistor resistance random access memory

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.