Abstract:The information explosion inmodern society requires increasingly higher densities in data storage, which is gradually becoming difficult to achieve through traditional binary memory techniques. Resistance switching random access memory (RRAM), as a promising high-density memory solution, is gradually attracting both fundamental and industrial interest. RRAMs consist of two electrodes sandwiching a thin layer of active material that, under an external electric eld, possesses different conductive states, which are considered “0” or “1” for information storage. In addition, due to their simple three-layers structure, RRAMs can be used for three-dimensional stacking and can dramatically expand the information density. Most importantly, if multiple conductive states exist in the active materials, each memory cell can store more than two states, such as “0”, “1”, “2”.. This multilevel RRAM technique is expected to result in a revolutionary enhancement in the information density from 2 to X (where n is the cell density and X is the state number of each cell). Aer decades of intensive research, many inorganic oxides, polymers and small molecules have been found to exhibit multilevel resistive switching behaviours and are thus considered candidate active materials for multilevel RRAMs. However, to enable industrial use, RRAM devices must show good reproducibility, including a high multilevel memory device yield and narrow distribution of OFF/ON1/ON2 switching voltages. Unfortunately, numerous studies have explored new RRAM active materials based on the measurements on individual devices, but statistical data on a large batch are rarely reported. Our recent statistical work demonstrated that

Design of a Two-Layer Structure to Significantly Improve the Performance of Zinc Oxide Resistive Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WO<sub>X</sub>/ZnO Bilayer Structure

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Thermal Stability and Data Retention of Resistive Random Access Memory with Hfox/Zno Double Layers

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

ing to achieve organic ternary memory with a high device yield and improved performance †

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Stable and Repeatable Zro2 Rram Achieved by Nio Barrier Layer for Negative Set Phenomenon Elimination

Thermal Stability of Resistive Switching Effect in ZnO/BiFeO3 Bilayer Structure

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt

High Performance Low Power Multilevel Oxide Based RRAM Devices Based on TiOxNy/Ga2O3 Hybrid Structure

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Stable and repeatable ZrO 2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination

Improved Performance of HfxZnyO‐Based RRAM and Its Switching Characteristics Down to 4 K Temperature