Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Effect of charge quantity on conduction mechanism of high-And low-resistance states during forming process in a one-Transistor-one-resistor resistance random access memory

Effect of Pulse and Dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Investigation of the Forming Program Failture in 1T1R Structure

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process

The storage mechanism of resisitive random access

Solving the issue of increasing forming voltage during device miniaturization in hafnium oxide-based resistive access memory using high-k sidewall material

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Conduction mechanisms, dynamics and stability in ReRAMs

Investigation of forming process for metal oxide-based resistive switching memory by stochastic simulation

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Random telegraph noise and resistance switching analysis of oxide based resistive memory.