Electrostatic gating dependent multiple band alignments in ferroelectric VS 2 /Ga 2 O 3 van der Waals heterostructures
Yunlai Zhu,Zihan Qu,Xiaoteng Wang,Jishun Zhang,Zuheng Wu,Zuyu Xu,Fei Yang,Jun Wang,Yuehua Dai
DOI: https://doi.org/10.1039/d3cp02428h
IF: 3.3
2023-08-11
Physical Chemistry Chemical Physics
Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures with spontaneous intrinsic ferroelectrics play an essential role in ferroelectric memories. Also, the reverse of polarized directions inducing band alignment transitions among different types provides a new path for multifunctional devices. In this work, the structural and electronic properties of 2D VS2/Ga2O3 vdW heterostructures under different polarization were investigated using first-principles calculations with the vdW correction of DFT-D2 method. The results reveal that the polarized direction of 2D Ga2O3 monolayer can cause a distinct band structure reversion from metal to semiconductor due to the shift of band alignment induced by the interlayer charge transfer. Moreover, the VS2/P↑ Ga2O3 heterostructures retain type-I and type-II band alignment in the majority and minority channel under an external electric field, respectively. Interestingly, applying the external electric field for VS2/P↓ Ga2O3 heterostructures can lead to a transition from type-II to type-I in the majority channel, while from type-II to type-III in the minority channel. Our work provides a feasible way to realize 2D VS2/Ga2O3 vdW heterostructures for the potential applications in ferroelectric memories and electrostatic gating dependent multiple band alignments devices.
chemistry, physical,physics, atomic, molecular & chemical