The versatile characteristics of Ars/SGaInS van der Waals heterostructures
Iqtidar Ahmad,Anwar Ali,Ismail Shahid,Rawaid Ali,Wei Xiong,Lei Gao,Jinming Cai
DOI: https://doi.org/10.1039/d2cp04832a
IF: 3.3
2023-03-09
Physical Chemistry Chemical Physics
Abstract:Two-dimensional (2D) materials upright stacking form layered van der Waals heterostructures (vdWHs) are currently believed to be attractive prospects for optoelectronic, photocatalytic, and thermoelectric devices because they can merge the capabilities of the distinct 2D materials. Here, we evaluate the electronic, optical, photocatalytic, and thermoelectric response of Model-I and Model-II of Ars/SGaInS vdWHs via first-principles computations. The energetic, dynamical, and thermal stabilities confirmation of these vdWHs suggests a lot of promise in experimental functionality. Model-I and Model-II are indirect semiconductors with type-II band alignment and band gaps of 1.53 eV and 1.86 eV, correspondingly. The built-in electric field considerably accelerates the transmission of electrons from Ars layer to SGaInS layer. Compared to pristine monolayers, both models contain appropriate band edge positions to ensure overall water splitting efficiently. Interestingly, at -8% compressive strain, the Model-I secures type-III band alignment, which is very advantageous for field-effect transistors. In the visible and ultraviolet zones of the radiating spectrum, the proposed vdWHs have significantly improved absorption spectra, and the biaxial strain also has considerable impact on optical absorption. The investigated vdWHs have high seebeck coefficients and substantial electrical conductivities, which contribute to high power factor values, particularly at 800 K. The outcomes specify that our designed Ars/SGaInS vdWHs have a multifunctional character that can perform a better role in optoelectronics, photovoltaics, photocatalysis, tunneling field effect transistors, and thermoelectric devices.
chemistry, physical,physics, atomic, molecular & chemical