Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Yue Li,Chen Chen,Wei Li,Xiaoyu Mao,Heng Liu,Jianyong Xiang,Anmin Nie,Zhongyuan Liu,Wenguang Zhu,Hualing Zeng

DOI: https://doi.org/10.48550/arXiv.2005.04926

2020-05-11

Abstract:Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: **How to realize the regulation of the out - of - plane field - effect of the two - dimensional ferroelectric material α - In₂Se₃ through the in - plane voltage (in - plane voltage)**. Specifically, the researchers hope to develop a new method to control the carrier concentration and the direction of electric polarization in two - dimensional ferroelectric materials by applying in - plane voltages without relying on the traditional vertical electric field.

### Background and Problem
In traditional field - effect transistors (FETs), the carrier concentration in materials is usually modulated by applying a gate voltage in the direction perpendicular to the conductive channel. However, this structure increases the complexity of the device and limits its application in specific fields, especially in flexible nanoelectronics and optoelectronics. Therefore, researchers hope to develop a new device design that can achieve similar field - effect regulation in a coplanar structure.

### Research Objectives
1. **Verify the electric dipole - locking characteristics in α - In₂Se₃**: α - In₂Se₃ is a two - dimensional ferroelectric semiconductor with unique electric dipole - locking characteristics, and there is a strong coupling relationship between its in - plane and out - of - plane electric polarizations. The researchers hope to verify this characteristic through experiments.

2. **Realize the regulation of out - of - plane electric polarization by in - plane voltage**: Based on the electric dipole - locking characteristics of α - In₂Se₃, the researchers hope to develop a coplanar field - effect transistor (CP - FET), in which the out - of - plane electric polarization can be controlled by applying in - plane voltages.

3. **Construct new nano - electronic devices**: By combining α - In₂Se₃ with other two - dimensional materials (such as MoS₂), the researchers hope to demonstrate the potential of this new field - effect regulation method in constructing high - performance nano - electronic devices.

### Main Achievements
- **Verified the coupling relationship between in - plane and out - of - plane electric polarizations in α - In₂Se₃**: Through techniques such as piezoresponse force microscopy (PFM) and scanning Kelvin probe force microscopy (KPFM), the researchers have confirmed the strong coupling relationship between the in - plane and out - of - plane electric polarizations in α - In₂Se₃.

- **Realized the reversible regulation of out - of - plane electric polarization by in - plane voltage**: By applying in - plane voltages, the researchers have successfully realized the reversible flipping of the out - of - plane electric polarization in α - In₂Se₃, and this regulation is stable and non - volatile.

- **Constructed and tested the coplanar field - effect transistor (CP - FET)**: The researchers vertically stacked α - In₂Se₃ and MoS₂ to construct a coplanar field - effect transistor and verified its performance through experiments. The results show that by applying in - plane voltages, the conductivity of the MoS₂ channel can be significantly modulated, demonstrating the potential of this new device in practical applications.

In general, this research provides a brand - new idea for developing new nano - electronic devices based on two - dimensional ferroelectric materials. In particular, the regulation of out - of - plane electric polarization through in - plane voltages is expected to promote the development of flexible nanoelectronics and optoelectronics.