Out-of-plane Ferroelectricity and Robust Magnetoelectricity in Quasi-Two-dimensional Materials

Xue-Zeng Lu,Hui-Min Zhang,Ying Zhou,Tong Zhu,Hongjun Xiang,Shuai Dong,Hiroshi Kageyama,James M. Rondinelli

DOI: https://doi.org/10.1126/sciadv.adi0138

IF: 13.6

2023-01-01

Science Advances

Abstract:Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden-Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.