Abstract:There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures, and the impurity-related deep energy level behavior will have a significant impact on device performance. However, a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures. We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence (CL) mapping. We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals. The lateral growth sector, i.e., the {101̅1} sector, forms six side facets of the microdisk and shows significant near-bandgap emission (NBE) and weak deep energy level luminescence. Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface ( R a < 0.7 nm) and low stress. The self-assembled microdisk shows significant ultraviolet (UV) lasing action (main lasing peak wavelength 370.9 nm, quality factor 1278, threshold 6 × 10 4 µJ/cm 2 ) under pulsed optical pumping. We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk, the high structural quality, the low content of deep energy level defects, the low surface roughness, and the low stress.

Optical and Electrical Characterizations of the V-shaped Pits in Fe-doped Bulk GaN

Investigation of Pits in Ge-doped GaN Grown by HVPE

Investigation of the properties and formation process of a peculiar V-pit in HVPE-grown GaN film

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Ultrafast Nonlinearity and Broadband Photodynamics in Fe-Doped GaN Crystals

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Optical Nonlinearities and Carrier Dynamics in Fe Doped GaN Single Crystal

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Influence of Penetrating V-Pits on Leakage Current of Gan Based P-I-N Uv Detector

The electrical properties of bulk GaN crystals grown by HVPE

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Ultrafast Broadband Carrier and Exciton Dynamics of Fe-related Centers in GaN

Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

Study on Carrier Transportation in InGaN Based Green LEDs with V-pits Structure in the Active Region

Effect of Fe-doping on Nonlinear Optical Responses and Carrier Trapping Dynamics in GaN Single Crystals

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Effects of Fe Doping on the Strain and Optical Properties of GaN Epilayers Grown on Sapphire Substrates

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition