Abstract:Due to the excellent silicon carbide (SiC) material characteristics, SiC mosfet s can operate at extremely high temperatures and can be used in harsh environment applications. In this case, it is crucial to ensure the reliability of the power electronic systems. The temperature-sensitive electrical parameters (TSEPs) have been used for online junction temperature monitoring to monitor the health condition of the SiC mosfet at low temperatures (<175 °C). However, the performance of the TSEPs at extremely high temperatures is still unknown, and the influence of temperature on the TSEPs of SiC mosfet s at extremely high temperatures is unclear. In this article, the theoretical mechanisms of the impact of the extremely high temperature on TSEPs are investigated in detail. In particular, the different effects of high temperature on the turn- on delay time and turn- off delay time are discussed carefully. Based on the proposed high-temperature characteristic test method, the TSEPs of SiC mosfet (including static and dynamic characteristics) are tested and analyzed comprehensively from room temperature to 375 °C. And the sensitivity and linearity of the TSEPs in different temperature ranges are analyzed and compared. According to the results, threshold voltage and turn- off delay time are the two TSEPs with good sensitivity and linearity over a wide temperature range (from room temperature to 375 °C). And the linearity of the turn- off delay time is the best among all TSEPs over a wide temperature range.

Comprehensive Characterization of the 4H-Sic Planar and Trench Gate MOSFETs from Cryogenic to High Temperature

Characterization of 4H-SiC Planar MOSFETs and Trench MOSFETs at Cryogenic and High Temperatures

Characterization of 1.2 Kv 4H-Sic Power Mosfets and Si Igbts at Cryogenic and High Temperatures

Dynamic Performance Of 4h-Sic Power Mosfets And Si Igbts Over Wide Temperature Range

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Effects of Ionizing Radiation on 4H-Sic Mosfets at Cryogenic Temperature

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC Mosfet at Extremely High Temperatures

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Characteristics of SiC MOSFET in a Wide Temperature Range

High-temperature Electrical Characteristics of JBS-integrated 4H-Sic MOSFETs

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Analyses on High-Temperature Electrical Properties of 4H-Sic N-Mosfet

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature