Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Comparative Study on Reliability and Application Features of SiC MOSFET

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism

Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver