Abstract:An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530nm and 0.08 for those emitting at 555nm are determined. Those values hold for the high current density of 50A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16lm/W. At 780A/cm2 we obtain 22lm when measured through the substrate only. The 555nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.

Optical Characterization of InGaN/GaN Quantum Well Active Region of Green Laser Diodes

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

High-power Hybrid GaN-based Green Laser Diodes with ITO Cladding Layer

Design and Growth of GaN-based Blue and Green Laser Diodes

Characterization of GaInN/GaN layers for green emitting laser diodes

Suppression Of Thermal Degradation Of Ingan/Gan Quantum Wells In Green Laser Diode Structures During The Epitaxial Growth

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Significant Increase of Quantum Efficiency of Green InGaN Quantum Well by Realizing Step-Flow Growth

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Effect of Inhomogeneous Broadening on Threshold Current of GaN-based Green Laser Diodes

Suppression of Recombination in Waveguide in C-Plane InGaN-based Green Laser Diodes

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes