High Quality Factor PECVD Si3N4 Ring Resonators Compatible with CMOS Process

Xingchen Ji,Samantha P. Roberts,Michal Lipson
DOI: https://doi.org/10.1364/cleo_si.2019.sm2o.6
2019-01-01
Abstract:We demonstrate high-confinement Si3N4 resonators with intrinsic quality factor more than 1 million using standard PECVD process. We show that by addressing scattering, the loss at 1.6 µm can be as low as 0.4 dB/cm. © 2019 The Author(s)
What problem does this paper attempt to address?