Abstract:Self-forming barriers for copper (Cu) interconnect metallization are well developed. However, the self-forming-barrier process and associated electromigration behaviors of narrow lines of cobalt (Co), a new interconnect wiring material for sub-10-nm semiconductor device nodes, are yet to be explored. In this study, we present an all-wet electroless trench-filling process to fabricate narrow (100 nm) lines of Co and MnO-added Co [Co(MnO)], then thermally annealed to some extent (400 °C/30 min) prior to electromigration testing. Empirical data obtained from accelerated electromigration testing, including failure lifetimes, current-density scaling factors, activation energies and physical failure profiles, consistently show that electromigration reliability of the Co lines is markedly enhanced by 0.1% added MnO. Transmission electron microscopy and focused ion beam imaging, along with dynamic adhesion strength data, reveal that the enhancement is related to annealing-induced segregation and dispersion of MnO particles at the interface with SiO 2 , ensuring adhesion of Co on SiO 2 , preventing interfacial interdiffusion and stuffing electromigration pathways. The adhesion strength, microstructures and Joule-heating data of Co and Co(MnO) are provided for the discussion of the differences in their electromigration performance and failure mechanism. Comments on electroless-plated Co as a new interconnect material are also given.

Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Comparison of Cobalt Integration with Various Dielectric Materials under Thermal and Electrical Stress

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Pathfinding of Ru-Liner/Cu-Reflow Interconnect Reliability Solution

Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

CVD-Mn/CVD-Ru-based barrier/liner solution for advanced BEOL Cu/Low-k interconnects

Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliability enhancement for extremely dilute alloying of manganese oxide

Extending Copper Interconnects and Epoxy Dielectrics to Multi-GHz Frequencies

Exploring W-Cu Hybrid Dual Damascene Metallization for Future Nodes

Grain-boundary/interface Structures and Scatterings of Ruthenium and Molybdenum Metallization for Low-Resistance Interconnects

Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

A Novel Low-temperature Co-Co Direct Bonding for Future 3D Interconnection

Synergistic enhancement of adhesion and electromigration reliability of cobalt via super-diluted (0.06 at.%) tungsten alloying as next-generation interconnect materials

Improving the Electromigration Life of Advanced Interconnects through Graphene Capping

Attenuation Measurement of the Dielectric Rod Using Parallel Strips with a Resonable Field Environment

The electric field dependence of Cu migration induced dielectric failure in interlayer dielectric for integrated circuits