Extending Copper Interconnects and Epoxy Dielectrics to Multi-GHz Frequencies

Junghyun Park,Jiayou Xu,Anthony Engler,Jaimal Williamson,Varughese Mathew,Sunggook Park,John Flake
DOI: https://doi.org/10.1109/tcpmt.2024.3399662
Abstract:Future multichip packages require Die-to-Die (D2D) interconnects operating at frequencies above 10 GHz; however, the extension of copper interconnects and epoxy dielectrics presents a trade-off between performance and reliability. This paper explores insertion losses and adhesion as a function of interface roughness at frequencies up to 18 GHz. We probe epoxy surface chemistry as a function of curing time and use wet etching to modulate surface roughness. The morphology is quantified by atomic force microscopy (AFM) and two-dimensional fast Fourier transform (2D FFT). Peel test and vector network analysis are used to examine the impacts of both type and level of roughness. The trade-offs between power efficiency and reliability are presented and discussed.
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