Abstract:This paper presents a novel on-chip passive device that provides a more constant characteristic impedance over a wide frequency band compared to conventional microstrip transmission lines. This device is designed for applications whose frequencies span the range of the microwave frequency region from 1 GHz to 30 GHz up to the millimeter-wave (MMW) frequency bands greater than 30 GHz. The novel, impedance-optimized, microstrip transmission line presented is well suited to reduce the effects of characteristic impedance mismatch in high-performance on-chip analog circuits where it is desirable for the transmission line characteristic impedance to remain relatively constant in all operating frequency bands. This new device utilizes the frequency-dependent nature of the silicon substrate capacitance to reduce variation in transmission line characteristic impedance with frequency. Using specially designed metal-to-silicon substrate capacitance structures designed in "windows" that perforate a bottom grounded microstrip return line to provide additional capacitance to the signal path at lower frequencies which compensates for the higher DC inductance of the thick metal signal lines at low frequencies caused by the resistance/inductance skin-effect. The proposed structure is ideal for multi-band and ultra-wide band applications, for example, analog circuits that operate in both the WCDMA range (2.11-2.17 GHz) and also in the MMW range (f > 30 GHz). An impedance-optimized transmission line is designed and studied in a 130 nm BiCMOS technology. The proposed device exhibits significantly improved characteristic impedance behavior versus frequency compared to conventional microstrip lines and can be implemented in any silicon-based analog technology.

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